Sung-Un Kwean

Person

Yongin-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a mask having nitride film
- Patent number 7,001,692
- Issue date Feb 21, 2006
- Samsung Electronics, Co., Ltd.
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching gas composition for silicon oxide and method of etching sil...
- Patent number 6,897,153
- Issue date May 24, 2005
- Samsung Electronics, Co., Ltd.
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a capacitor of a semiconductor device
- Patent number 6,825,121
- Issue date Nov 30, 2004
- Samsung Electronics Co., Ltd.
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a contact in a semiconductor process
- Patent number 6,815,335
- Issue date Nov 9, 2004
- Samsung Electronics Co., Ltd.
- Jae-Seung Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having variable width gate electrode and method of manuf...
- Patent number 6,656,808
- Issue date Dec 2, 2003
- Samsung Electronics Co., Ltd.
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing contact hole using an etching barrier laye...
- Patent number 6,150,281
- Issue date Nov 21, 2000
- Samsung Electronics, Co., Ltd.
- Sung-un Kwean
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Etching gas composition for silicon oxide and method of etching sil...
- Publication number 20050161640
- Publication date Jul 28, 2005
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with borderless contact structure and method o...
- Publication number 20050045968
- Publication date Mar 3, 2005
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a contact in a semiconductor process
- Publication number 20040038524
- Publication date Feb 26, 2004
- Samsung Electronics Co., Ltd.
- Jae-Seung Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a mask having nitride film
- Publication number 20030114003
- Publication date Jun 19, 2003
- SAMSUNG ELECTRONICS CO., LTD.
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with borderless contact structure and method o...
- Publication number 20020190316
- Publication date Dec 19, 2002
- Samsung Electronics, Co., Ltd.
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a capacitor of a semiconductor device
- Publication number 20020127866
- Publication date Sep 12, 2002
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etching gas composition for silicon oxide and method of etching sil...
- Publication number 20020123231
- Publication date Sep 5, 2002
- Samsung Electronics Co. Ltd.
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor having variable width gate electrode and method of manuf...
- Publication number 20020027254
- Publication date Mar 7, 2002
- Sung-Un Kwean
- H01 - BASIC ELECTRIC ELEMENTS

Sung-Un Kwean

Person

Patents Grantslast 30 patents

Method of forming a mask having nitride film

Etching gas composition for silicon oxide and method of etching sil...

Method of manufacturing a capacitor of a semiconductor device

Method for forming a contact in a semiconductor process

Transistor having variable width gate electrode and method of manuf...

Method for manufacturing contact hole using an etching barrier laye...

Patents Applicationslast 30 patents

Etching gas composition for silicon oxide and method of etching sil...

Semiconductor device with borderless contact structure and method o...

Method for forming a contact in a semiconductor process

Method of forming a mask having nitride film

Semiconductor device with borderless contact structure and method o...

Method of manufacturing a capacitor of a semiconductor device

Etching gas composition for silicon oxide and method of etching sil...

Transistor having variable width gate electrode and method of manuf...