Sung Won JUN

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 11,145,761
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 10,573,719
- Issue date Feb 25, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 10,490,666
- Issue date Nov 26, 2019
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 9,865,735
- Issue date Jan 9, 2018
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 9,460,920
- Issue date Oct 4, 2016
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20200035822
- Publication date Jan 30, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20180061978
- Publication date Mar 1, 2018
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE ISOLATION
- Publication number 20170018624
- Publication date Jan 19, 2017
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20160336405
- Publication date Nov 17, 2016
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF III-V MATERIALS USING MOCVD WITH CHLORINE CLEANS OPERA...
- Publication number 20130005118
- Publication date Jan 3, 2013
- Sung Won Jun
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF REDUCING DEGRADATION OF MULTI QUANTUM WELL (MQW) LIGHT EM...
- Publication number 20110104843
- Publication date May 5, 2011
- Applied Materials, Inc.
- Sung Won Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEA...
- Publication number 20100273291
- Publication date Oct 28, 2010
- Applied Materials, Inc.
- Olga Kryliouk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR DEPOSITING GROUP III/V COMPOUNDS
- Publication number 20090149008
- Publication date Jun 11, 2009
- APPLIED MATERIALS, INC.
- Olga Kryliouk
- C30 - CRYSTAL GROWTH

Sung Won JUN

Person

Patents Grantslast 30 patents

Horizontal gate all around and FinFET device isolation

Horizontal gate all around device isolation

Horizontal gate all around and FinFET device isolation

Horizontal gate all around and FinFET device isolation

Horizontal gate all around device isolation

Patents Applicationslast 30 patents

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

HORIZONTAL GATE ALL AROUND DEVICE ISOLATION

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

FORMATION OF III-V MATERIALS USING MOCVD WITH CHLORINE CLEANS OPERA...

METHOD OF REDUCING DEGRADATION OF MULTI QUANTUM WELL (MQW) LIGHT EM...

DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEA...

METHOD FOR DEPOSITING GROUP III/V COMPOUNDS