Sungkwon Lee

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
ESD protection circuit
- Patent number 11,876,090
- Issue date Jan 16, 2024
- Cypress Semiconductor Corporation
- David Michael Rogers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined positive and negative voltage electrostatic discharge (ESD...
- Patent number 11,581,729
- Issue date Feb 14, 2023
- Cypress Semiconductor Corporation
- David Michael Rogers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit
- Patent number 11,521,962
- Issue date Dec 6, 2022
- Cypress Semiconductor Corporation
- David Michael Rogers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric pass field-effect transistor for nonvolatile memory
- Patent number 11,361,826
- Issue date Jun 14, 2022
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric pass field-effect transistor for non-volatile memory
- Patent number 10,706,937
- Issue date Jul 7, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric pass field-effect transistor for nonvolatile memory
- Patent number 10,418,110
- Issue date Sep 17, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming drain extended MOS transistors for high voltage c...
- Patent number 10,217,639
- Issue date Feb 26, 2019
- Cypress Semiconductor Corporation
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric pass field-effect transistor for nonvolatile memory
- Patent number 10,020,060
- Issue date Jul 10, 2018
- Cypress Semiconductor Corporation
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Asymmetric pass field-effect transistor for non-volatile memory
- Patent number 9,589,652
- Issue date Mar 7, 2017
- Cypress Semiconductor Corporation
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
ESD clamp with a layout-alterable trigger voltage and a holding vol...
- Patent number 9,472,511
- Issue date Oct 18, 2016
- Cypress Semiconductor Corporation
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming drain extended MOS transistors for high voltage c...
- Patent number 9,123,642
- Issue date Sep 1, 2015
- Cypress Semiconductor Corporation
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS embedded high voltage transistor
- Patent number 7,592,661
- Issue date Sep 22, 2009
- Cypress Semiconductor Corporation
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ESD PROTECTION CIRCUIT
- Publication number 20230343779
- Publication date Oct 26, 2023
- CYPRESS SEMICONDUCTOR CORPORATION
- David Michael Rogers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMBINED POSITIVE AND NEGATIVE VOLTAGE ELECTROSTATIC DISCHARGE (ESD...
- Publication number 20210344193
- Publication date Nov 4, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- David Michael Rogers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
- Publication number 20200402588
- Publication date Dec 24, 2020
- LONGITDUE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY
- Publication number 20200020402
- Publication date Jan 16, 2020
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FORMING DRAIN EXTENDED MOS TRANSISTORS FOR HIGH VOLTAGE C...
- Publication number 20190355583
- Publication date Nov 21, 2019
- LONGITUDE FLASH MEMORY SOLUTIONS LTD.
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
- Publication number 20180358097
- Publication date Dec 13, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
- Publication number 20170169888
- Publication date Jun 15, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY
- Publication number 20170092367
- Publication date Mar 30, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Sungkwon Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ESD Clamp with a Layout-Alterable Trigger Voltage and a Holding Vol...
- Publication number 20150200168
- Publication date Jul 16, 2015
- CYPRESS SEMICONDUCTOR CORPORATION
- Sungkwon Lee
- H01 - BASIC ELECTRIC ELEMENTS

Sungkwon Lee

Person

Patents Grantslast 30 patents

ESD protection circuit

Combined positive and negative voltage electrostatic discharge (ESD...

ESD protection circuit

Asymmetric pass field-effect transistor for nonvolatile memory

Asymmetric pass field-effect transistor for non-volatile memory

Asymmetric pass field-effect transistor for nonvolatile memory

Method of forming drain extended MOS transistors for high voltage c...

Asymmetric pass field-effect transistor for nonvolatile memory

Asymmetric pass field-effect transistor for non-volatile memory

ESD clamp with a layout-alterable trigger voltage and a holding vol...

Method of forming drain extended MOS transistors for high voltage c...

CMOS embedded high voltage transistor

Patents Applicationslast 30 patents

ESD PROTECTION CIRCUIT

COMBINED POSITIVE AND NEGATIVE VOLTAGE ELECTROSTATIC DISCHARGE (ESD...

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY

METHOD OF FORMING DRAIN EXTENDED MOS TRANSISTORS FOR HIGH VOLTAGE C...

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY

ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NON-VOLATILE MEMORY

ESD Clamp with a Layout-Alterable Trigger Voltage and a Holding Vol...