Sungsoo CHI

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Sense amplifier, method for driving sense amplifier, and memory
- Patent number 12,205,628
- Issue date Jan 21, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Readout circuit structure
- Patent number 12,119,047
- Issue date Oct 15, 2024
- CHANXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier circuit and data read method
- Patent number 12,112,824
- Issue date Oct 8, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Guifen Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Readout circuit layout and sense amplification circuit
- Patent number 12,100,441
- Issue date Sep 24, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Guifen Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Control circuit, method for reading and writing and memory
- Patent number 12,080,340
- Issue date Sep 3, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplification structure and memory architecture
- Patent number 12,033,688
- Issue date Jul 9, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line driver circuit and memory
- Patent number 12,027,232
- Issue date Jul 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Guifen Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Column select signal cell circuit, bit line sense circuit and memory
- Patent number 12,027,201
- Issue date Jul 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and memory
- Patent number 12,002,503
- Issue date Jun 4, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with error checking and correcting unit
- Patent number 11,894,089
- Issue date Feb 6, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Weibing Shang
- G11 - INFORMATION STORAGE
Information Patent Grant
Bit line sense circuit and memory
- Patent number 11,862,239
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sense amplifier, memory and data readout method
- Patent number 11,862,284
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Kanyu Cao
- G11 - INFORMATION STORAGE
Information Patent Grant
Readout circuit, memory, and method of reading out data of memory
- Patent number 11,830,569
- Issue date Nov 28, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Antifuse array structure and memory
- Patent number 11,610,902
- Issue date Mar 21, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Readout circuit layout structure and method of reading data
- Patent number 11,594,264
- Issue date Feb 28, 2023
- GHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplification circuit and method of reading out data
- Patent number 11,581,034
- Issue date Feb 14, 2023
- GHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic control conversion circuit
- Patent number 11,437,996
- Issue date Sep 6, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- WeiBing Shang
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
Electronic Device and Driving Method Thereof
- Publication number 20240339164
- Publication date Oct 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH ERROR CHECKING AND CORRECTING UNIT
- Publication number 20240145022
- Publication date May 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Weibing SHANG
- G11 - INFORMATION STORAGE
Information Patent Application
READOUT CIRCUIT ARCHITECTURE AND SENSE AMPLIFICATION CIRCUIT
- Publication number 20230230630
- Publication date Jul 20, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guifen YANG
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER, METHOD FOR DRIVING SENSE AMPLIFIER, AND MEMORY
- Publication number 20230223072
- Publication date Jul 13, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER CIRCUIT AND DATA READ METHOD
- Publication number 20230162762
- Publication date May 25, 2023
- Changxin Memory Technologies, Inc.
- Guifen YANG
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER CIRCUIT ARCHITECTURE
- Publication number 20230162782
- Publication date May 25, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guifen YANG
- G11 - INFORMATION STORAGE
Information Patent Application
READOUT CIRCUIT, MEMORY, AND METHOD OF READING OUT DATA OF MEMORY
- Publication number 20230154503
- Publication date May 18, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DRIVER, WORD LINE DRIVER ARRAY, AND SEMICONDUCTOR STRUCTURE
- Publication number 20230143797
- Publication date May 11, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Application
ANTIFUSE ARRAY STRUCTURE AND MEMORY
- Publication number 20230092101
- Publication date Mar 23, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Sungsoo CHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CIRCUIT AND MEMORY
- Publication number 20230077468
- Publication date Mar 16, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND MEMORY
- Publication number 20230083020
- Publication date Mar 16, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SENSE AMPLIFICATION CIRCUIT AND DATA READING METHOD
- Publication number 20230071414
- Publication date Mar 9, 2023
- ChangXin Memory Technologies, Inc.
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFICATION CIRCUIT AND METHOD OF READING OUT DATA
- Publication number 20230066578
- Publication date Mar 2, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFICATION STRUCTURE AND MEMORY ARCHITECTURE
- Publication number 20230061421
- Publication date Mar 2, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE DRIVER CIRCUIT AND MEMORY
- Publication number 20230030836
- Publication date Feb 2, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Guifen YANG
- G11 - INFORMATION STORAGE
Information Patent Application
READOUT CIRCUIT STRUCTURE
- Publication number 20230005522
- Publication date Jan 5, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL CIRCUIT, METHOD FOR READING AND WRITING AND MEMORY
- Publication number 20230005523
- Publication date Jan 5, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
COLUMN SELECT SIGNAL CELL CIRCUIT, BIT LINE SENSE CIRCUIT AND MEMORY
- Publication number 20220277785
- Publication date Sep 1, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G11 - INFORMATION STORAGE
Information Patent Application
BIT LINE SENSE CIRCUIT AND MEMORY
- Publication number 20220093164
- Publication date Mar 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- SUNGSOO CHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY
- Publication number 20220093201
- Publication date Mar 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Weibing SHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SENSE AMPLIFIER, MEMORY AND DATA READOUT METHOD
- Publication number 20220013152
- Publication date Jan 13, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Kanyu CAO
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC CONTROL CONVERSION CIRCUIT
- Publication number 20210384908
- Publication date Dec 9, 2021
- Changxin Memory Technologies, Inc.
- WeiBing SHANG
- H03 - BASIC ELECTRONIC CIRCUITRY

Sungsoo CHI

Person

Patents Grantslast 30 patents

Sense amplifier, method for driving sense amplifier, and memory

Readout circuit structure

Sense amplifier circuit and data read method

Readout circuit layout and sense amplification circuit

Control circuit, method for reading and writing and memory

Sense amplification structure and memory architecture

Word line driver circuit and memory

Column select signal cell circuit, bit line sense circuit and memory

Memory circuit and memory

Memory with error checking and correcting unit

Bit line sense circuit and memory

Sense amplifier, memory and data readout method

Readout circuit, memory, and method of reading out data of memory

Antifuse array structure and memory

Readout circuit layout structure and method of reading data

Sense amplification circuit and method of reading out data

Dynamic control conversion circuit

Patents Applicationslast 30 patents

Electronic Device and Driving Method Thereof

MEMORY WITH ERROR CHECKING AND CORRECTING UNIT

READOUT CIRCUIT ARCHITECTURE AND SENSE AMPLIFICATION CIRCUIT

SENSE AMPLIFIER, METHOD FOR DRIVING SENSE AMPLIFIER, AND MEMORY

SENSE AMPLIFIER CIRCUIT AND DATA READ METHOD

SENSE AMPLIFIER CIRCUIT ARCHITECTURE

READOUT CIRCUIT, MEMORY, AND METHOD OF READING OUT DATA OF MEMORY

WORD LINE DRIVER, WORD LINE DRIVER ARRAY, AND SEMICONDUCTOR STRUCTURE

ANTIFUSE ARRAY STRUCTURE AND MEMORY

MEMORY CIRCUIT AND MEMORY

MEMORY CIRCUIT AND MEMORY

SENSE AMPLIFICATION CIRCUIT AND DATA READING METHOD

SENSE AMPLIFICATION CIRCUIT AND METHOD OF READING OUT DATA

SENSE AMPLIFICATION STRUCTURE AND MEMORY ARCHITECTURE

WORD LINE DRIVER CIRCUIT AND MEMORY

READOUT CIRCUIT STRUCTURE

CONTROL CIRCUIT, METHOD FOR READING AND WRITING AND MEMORY

COLUMN SELECT SIGNAL CELL CIRCUIT, BIT LINE SENSE CIRCUIT AND MEMORY

BIT LINE SENSE CIRCUIT AND MEMORY

MEMORY

SENSE AMPLIFIER, MEMORY AND DATA READOUT METHOD

DYNAMIC CONTROL CONVERSION CIRCUIT