Suresh VISHWANATH

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 12,288,808
- Issue date Apr 29, 2025
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate-less vertical diode integrated circuit structures
- Patent number 12,154,898
- Issue date Nov 26, 2024
- Intel Corporation
- Avyaya Jayanthinarasimham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures including a titanium silicide material
- Patent number 12,046,654
- Issue date Jul 23, 2024
- Intel Corporation
- Dan S. Lavric
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with low resistivity
- Patent number 12,027,585
- Issue date Jul 2, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with high germanium concentration cappin...
- Patent number 12,027,417
- Issue date Jul 2, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 11,804,523
- Issue date Oct 31, 2023
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with low resistivity
- Patent number 11,621,325
- Issue date Apr 4, 2023
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with phosphorous and arsenic co-dopants
- Patent number 11,552,169
- Issue date Jan 10, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20240332392
- Publication date Oct 3, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PRO...
- Publication number 20240014268
- Publication date Jan 11, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...
- Publication number 20230197840
- Publication date Jun 22, 2023
- Intel Corporation
- Sanyam Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY
- Publication number 20230197785
- Publication date Jun 22, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...
- Publication number 20230132548
- Publication date May 4, 2023
- Intel Corporation
- Atsunori Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE-LESS VERTICAL DIODE INTEGRATED CIRCUIT STRUCTURES
- Publication number 20220199615
- Publication date Jun 23, 2022
- Intel Corporation
- Avyaya JAYANTHINARASIMHAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONCENTRATION CAPPIN...
- Publication number 20210407851
- Publication date Dec 30, 2021
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20210408258
- Publication date Dec 30, 2021
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH SURFACE GERMANIUM CONCENTRATION
- Publication number 20210408275
- Publication date Dec 30, 2021
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS
- Publication number 20210399119
- Publication date Dec 23, 2021
- Intel Corporation
- Suresh VISHWANATH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATION SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PR...
- Publication number 20210091181
- Publication date Mar 25, 2021
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY
- Publication number 20200312959
- Publication date Oct 1, 2020
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC CO-DOPANTS
- Publication number 20200312958
- Publication date Oct 1, 2020
- Intel Corporation
- Anand MURTHY
- H01 - BASIC ELECTRIC ELEMENTS

Suresh VISHWANATH

Person

Patents Grantslast 30 patents

High aspect ratio source or drain structures with abrupt dopant pro...

Substrate-less vertical diode integrated circuit structures

Integrated circuit structures including a titanium silicide material

Source or drain structures with low resistivity

Source or drain structures with high germanium concentration cappin...

High aspect ratio source or drain structures with abrupt dopant pro...

Source or drain structures with low resistivity

Source or drain structures with phosphorous and arsenic co-dopants

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

HIGH ASPECT RATIO SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PRO...

GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...

SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY

PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...

SUBSTRATE-LESS VERTICAL DIODE INTEGRATED CIRCUIT STRUCTURES

SOURCE OR DRAIN STRUCTURES WITH HIGH GERMANIUM CONCENTRATION CAPPIN...

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

SOURCE OR DRAIN STRUCTURES WITH HIGH SURFACE GERMANIUM CONCENTRATION

TRANSITION METAL-III-NITRIDE ALLOYS FOR ROBUST HIGH PERFORMANCE HEMTS

HIGH ASPECT RATION SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PR...

SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY

SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC CO-DOPANTS