Surinder Krishna

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage integrated circuits
- Patent number 4,958,210
- Issue date Sep 18, 1990
- General Electric Company
- Surinder Krishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor cathode and transistor emitter structures with insulator...
- Patent number 4,581,626
- Issue date Apr 8, 1986
- General Electric Company
- Surinder Krishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field controlled thyristor with buried grid
- Patent number 4,060,821
- Issue date Nov 29, 1977
- General Electric Co.
- Douglas E. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate modulated bipolar transistor
- Patent number 4,032,961
- Issue date Jun 28, 1977
- General Electric Company
- B. Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spatial control of lifetime in semiconductor device
- Patent number 3,988,771
- Issue date Oct 26, 1976
- General Electric Company
- Surinder Krishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current isolation means for integrated power devices
- Patent number 3,988,772
- Issue date Oct 26, 1976
- General Electric Company
- Surinder Krishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method, including TGZM, of making same
- Patent number 3,982,269
- Issue date Sep 21, 1976
- General Electric Company
- Manuel L. Torreno
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Gate modulated bipolar transistor
- Patent number 3,979,769
- Issue date Sep 7, 1976
- General Electric Company
- Douglas E. Houston
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed, high power plasma thyristor circuit
- Patent number 3,945,028
- Issue date Mar 16, 1976
- Westinghouse Electric Corporation
- Surinder Krishna
- G01 - MEASURING TESTING

Surinder Krishna

Person

Patents Grantslast 30 patents

High voltage integrated circuits

Thyristor cathode and transistor emitter structures with insulator...

Field controlled thyristor with buried grid

Gate modulated bipolar transistor

Spatial control of lifetime in semiconductor device

Current isolation means for integrated power devices

Semiconductor devices and method, including TGZM, of making same

Gate modulated bipolar transistor

High speed, high power plasma thyristor circuit