Susmita GHOSE

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 12,243,875
- Issue date Mar 4, 2025
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having nanowires with...
- Patent number 12,206,027
- Issue date Jan 21, 2025
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,990,513
- Issue date May 21, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,978,784
- Issue date May 7, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 11,923,370
- Issue date Mar 5, 2024
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having nanowires with...
- Patent number 11,769,836
- Issue date Sep 26, 2023
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 11,532,706
- Issue date Dec 20, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having germanium nano...
- Patent number 11,532,734
- Issue date Dec 20, 2022
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having vertically dis...
- Patent number 11,527,612
- Issue date Dec 13, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having underlying dop...
- Patent number 11,469,299
- Issue date Oct 11, 2022
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20240186378
- Publication date Jun 6, 2024
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE
- Publication number 20240153956
- Publication date May 9, 2024
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE
- Publication number 20240006499
- Publication date Jan 4, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION
- Publication number 20230420507
- Publication date Dec 28, 2023
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...
- Publication number 20230420574
- Publication date Dec 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...
- Publication number 20230387324
- Publication date Nov 30, 2023
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...
- Publication number 20230197724
- Publication date Jun 22, 2023
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENRICHED SEMICONDUCTOR NANORIBBONS FOR PRODUCING INTRINSIC COMPRESS...
- Publication number 20230147499
- Publication date May 11, 2023
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS
- Publication number 20230141914
- Publication date May 11, 2023
- Intel Corporation
- Ashish Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATTICE STACK FOR INTERNAL SPACER FABRICATION
- Publication number 20230134379
- Publication date May 4, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20230082276
- Publication date Mar 16, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...
- Publication number 20230074199
- Publication date Mar 9, 2023
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...
- Publication number 20230071989
- Publication date Mar 9, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...
- Publication number 20220416024
- Publication date Dec 29, 2022
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE
- Publication number 20220093647
- Publication date Mar 24, 2022
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...
- Publication number 20210408283
- Publication date Dec 30, 2021
- Intel Corporation
- Ashish AGRAWAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...
- Publication number 20200357930
- Publication date Nov 12, 2020
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...
- Publication number 20200312960
- Publication date Oct 1, 2020
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...
- Publication number 20200312981
- Publication date Oct 1, 2020
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...
- Publication number 20200105871
- Publication date Apr 2, 2020
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...
- Publication number 20200105872
- Publication date Apr 2, 2020
- Intel Corporation
- Glenn GLASS
- H01 - BASIC ELECTRIC ELEMENTS

Susmita GHOSE

Person

Patents Grantslast 30 patents

Forksheet transistors with dielectric or conductive spine

Gate-all-around integrated circuit structures having nanowires with...

Gate-all-around integrated circuit structures having embedded GeSnB...

Gate-all-around integrated circuit structures having germanium nano...

Forksheet transistors with dielectric or conductive spine

Gate-all-around integrated circuit structures having nanowires with...

Gate-all-around integrated circuit structures having embedded GeSnB...

Gate-all-around integrated circuit structures having germanium nano...

Gate-all-around integrated circuit structures having vertically dis...

Gate-all-around integrated circuit structures having underlying dop...

Patents Applicationslast 30 patents

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE

GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE

GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION

MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...

CO-INTEGRATION OF HIGH VOLTAGE (HV) AND LOW VOLTAGE (LV) TRANSISTOR...

ENRICHED SEMICONDUCTOR NANORIBBONS FOR PRODUCING INTRINSIC COMPRESS...

CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS

LATTICE STACK FOR INTERNAL SPACER FABRICATION

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...

FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STRAINED SOURC...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM NANO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DIS...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING UNDERLYING DOP...