Susumu Higuchi

Person

Takasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor phosphor
- Patent number 11,898,078
- Issue date Feb 13, 2024
- Shin-Etsu Handotai Co., Ltd.
- Susumu Higuchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium phosphide luminescent device
- Patent number 6,479,312
- Issue date Nov 12, 2002
- Shin-Etsu Handotai Co., Ltd.
- Masato Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and light emitting diode
- Patent number 6,433,365
- Issue date Aug 13, 2002
- Shin-Etsu Handotai Co., Ltd.
- Toru Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growth of a nitrogen-doped gallium phosphide epitaxial l...
- Patent number 5,985,023
- Issue date Nov 16, 1999
- Shin-Etsu Handotai Co., Ltd.
- Susumu Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gap type semiconductor substrate of red li...
- Patent number 5,851,850
- Issue date Dec 22, 1998
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid phase epitaxial
- Patent number 5,759,267
- Issue date Jun 2, 1998
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the determination of nitrogen concentration in compound...
- Patent number 5,731,209
- Issue date Mar 24, 1998
- Shin-Etsu Handotai Co., Ltd.
- Masato Yamada
- G01 - MEASURING TESTING
Information Patent Grant
GaP light emitting substrate and a method of manufacturing it
- Patent number 5,643,827
- Issue date Jul 1, 1997
- Shin-Etsu Handotai Kabushiki Kaisha
- Toshio Ootaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid phase epitaxial growth method for carrying out the same
- Patent number 5,603,761
- Issue date Feb 18, 1997
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gap light emitting device having a low carbon content in the substrate
- Patent number 5,514,881
- Issue date May 7, 1996
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap pure green light emitting element substrate
- Patent number 5,406,093
- Issue date Apr 11, 1995
- Shin-Etsu Handotai Co., Ltd.
- Masahisa Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaP light emitting element substrate with oxygen doped buffer
- Patent number 5,349,208
- Issue date Sep 20, 1994
- Shin-Etsu Handotai Kabushiki Kaisha
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid-phase growth process of compound semiconductor
- Patent number 5,234,534
- Issue date Aug 10, 1993
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PHOSPHOR
- Publication number 20200270518
- Publication date Aug 27, 2020
- Shin-Etsu Handotai Co., Ltd.
- Susumu HIGUCHI
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...

Susumu Higuchi

Person

Patents Grantslast 30 patents

Semiconductor phosphor

Gallium phosphide luminescent device

Epitaxial wafer and light emitting diode

Method for growth of a nitrogen-doped gallium phosphide epitaxial l...

Method for fabricating a gap type semiconductor substrate of red li...

Liquid phase epitaxial

Method for the determination of nitrogen concentration in compound...

GaP light emitting substrate and a method of manufacturing it

Liquid phase epitaxial growth method for carrying out the same

Gap light emitting device having a low carbon content in the substrate

Gap pure green light emitting element substrate

GaP light emitting element substrate with oxygen doped buffer

Liquid-phase growth process of compound semiconductor

Patents Applicationslast 30 patents

SEMICONDUCTOR PHOSPHOR