Susumu Iesaka

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Reverse conducting gate-turnoff thyristor
- Patent number 5,835,985
- Issue date Nov 10, 1998
- Kabushiki Kaisha Toshiba
- Michiaki Hiyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crimp-type power semiconductor device
- Patent number 5,198,882
- Issue date Mar 30, 1993
- Kabushiki Kaisha Toshiba
- Hideo Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode with guard ring
- Patent number 4,607,270
- Issue date Aug 19, 1986
- Kabushiki Kaisha Toshiba
- Susumu Iesaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-loss P-i-n diode
- Patent number 4,476,481
- Issue date Oct 9, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Susumu Iesaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a glass passivation semiconductor device
- Patent number 4,476,154
- Issue date Oct 9, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Susumu Iesaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,456,920
- Issue date Jun 26, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Susumu Iesaka
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER