Susumu Maeda

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Thermal processing method for silicon wafer
- Patent number 11,162,191
- Issue date Nov 2, 2021
- Globalwafers Japan Co., Ltd
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer
- Patent number 10,648,101
- Issue date May 12, 2020
- Globalwafers Japan Co., Ltd
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer and method for heat-treating silicon wafer
- Patent number 8,999,864
- Issue date Apr 7, 2015
- Global Wafers Japan Co., Ltd.
- Takeshi Senda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing single crystal silicon wafer from ingot gro...
- Patent number 8,476,149
- Issue date Jul 2, 2013
- Global Wafers Japan Co., Ltd.
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treating a silicon wafer
- Patent number 8,399,341
- Issue date Mar 19, 2013
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of heat treating silicon wafer
- Patent number 8,252,700
- Issue date Aug 28, 2012
- Covalent Materials Corporation
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for silicon wafer
- Patent number 7,977,219
- Issue date Jul 12, 2011
- Covalent Materials Corporation
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitrogen doped silicon wafer and manufacturing method thereof
- Patent number 7,875,117
- Issue date Jan 25, 2011
- Sumco Techxiv Corporation
- Kouzo Nakamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon semiconductor substrate heat-treatment method and silicon s...
- Patent number 7,759,227
- Issue date Jul 20, 2010
- Sumco Techxiv Corporation
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing silicon wafer
- Patent number 7,329,317
- Issue date Feb 12, 2008
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Susumu Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single-crystal semiconductor and apparatus fo...
- Patent number 7,235,128
- Issue date Jun 26, 2007
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Susumu Maeda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing silicon single crystal having no flaw
- Patent number 6,869,478
- Issue date Mar 22, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon crystal, and device and method for manufacturing same
- Patent number 6,096,128
- Issue date Aug 1, 2000
- Toshiba Ceramics Co., Ltd.
- Hideo Nakanishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Detecting method of impurity concentration in crystal, method for p...
- Patent number 6,019,837
- Issue date Feb 1, 2000
- Komatsu Electronic Metals Co., Ltd.
- Susumu Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Detecting method of impurity concentration in crystal, method for p...
- Patent number 6,004,393
- Issue date Dec 21, 1999
- Komatsu Electronic Metals Co., Ltd.
- Susumu Maeda
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON WAFERS
- Publication number 20240339315
- Publication date Oct 10, 2024
- GlobalWafers Japan Co., Ltd.
- Susumu MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER
- Publication number 20240304458
- Publication date Sep 12, 2024
- GLOBAL WAFERS JAPAN CO., LTD.
- Susumu MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL PROCESSING METHOD FOR SILICON WAFER
- Publication number 20200181802
- Publication date Jun 11, 2020
- GLOBALWAFERS JAPAN CO., LTD.
- Susumu MAEDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER
- Publication number 20190119828
- Publication date Apr 25, 2019
- GLOBALWAFERS JAPAN CO., LTD.
- Susumu MAEDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A SILICON WAFER
- Publication number 20160293446
- Publication date Oct 6, 2016
- GlobalWafers Japan Co., Ltd.
- Haruo SUDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON WAFER
- Publication number 20130175726
- Publication date Jul 11, 2013
- GlobalWafers Japan Co., Ltd.
- Toshiro MINAMI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT-TREATING SILICON WAFER
- Publication number 20130078588
- Publication date Mar 28, 2013
- Covalent Silicon Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HEAT TREATING A SILICON WAFER
- Publication number 20120184091
- Publication date Jul 19, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER
- Publication number 20120139088
- Publication date Jun 7, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of heat treating silicon wafer
- Publication number 20100197146
- Publication date Aug 5, 2010
- COVALENT MATERIALS CORPORATION
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR SILICON WAFER
- Publication number 20100055884
- Publication date Mar 4, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...
- Publication number 20100038757
- Publication date Feb 18, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Semiconductor Substrate Heat-Treatment Method and Silicon S...
- Publication number 20070252239
- Publication date Nov 1, 2007
- KOMATSU ELECTRONIC METALS CO., LTD
- Susumu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITORGEN DOPED SILICON WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20070218570
- Publication date Sep 20, 2007
- KOMATSU ELECTRONIC METALS CO., LTD
- Kouzo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon wafer
- Publication number 20060005762
- Publication date Jan 12, 2006
- Susumu Maeda
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single-crystal semiconductor and apparatus fo...
- Publication number 20050139149
- Publication date Jun 30, 2005
- KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA
- Susumu Maeda
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon single crystal having no flaw
- Publication number 20030041796
- Publication date Mar 6, 2003
- Kozo Nakamura
- C30 - CRYSTAL GROWTH

Susumu Maeda

Person

Patents Grantslast 30 patents

Thermal processing method for silicon wafer

Silicon wafer

Silicon wafer and method for heat-treating silicon wafer

Method of manufacturing single crystal silicon wafer from ingot gro...

Method for heat treating a silicon wafer

Method of heat treating silicon wafer

Manufacturing method for silicon wafer

Nitrogen doped silicon wafer and manufacturing method thereof

Silicon semiconductor substrate heat-treatment method and silicon s...

Method for producing silicon wafer

Process for producing single-crystal semiconductor and apparatus fo...

Method for producing silicon single crystal having no flaw

Silicon crystal, and device and method for manufacturing same

Detecting method of impurity concentration in crystal, method for p...

Detecting method of impurity concentration in crystal, method for p...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON WAFERS

METHOD FOR MANUFACTURING SILICON WAFER AND SILICON WAFER

THERMAL PROCESSING METHOD FOR SILICON WAFER

SILICON WAFER

METHOD FOR MANUFACTURING A SILICON WAFER

METHOD FOR MANUFACTURING SILICON WAFER

METHOD FOR HEAT-TREATING SILICON WAFER

METHOD FOR HEAT TREATING A SILICON WAFER

SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER

Method of heat treating silicon wafer

MANUFACTURING METHOD FOR SILICON WAFER

SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...

Silicon Semiconductor Substrate Heat-Treatment Method and Silicon S...

NITORGEN DOPED SILICON WAFER AND MANUFACTURING METHOD THEREOF

Method for producing silicon wafer

Process for producing single-crystal semiconductor and apparatus fo...

Method for producing silicon single crystal having no flaw