Sylvain Leomant

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with semiconductor mesas between adjacent gate...
- Patent number 12,159,933
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar gate semiconductor device with oxygen-doped Si-layers
- Patent number 11,908,904
- Issue date Feb 20, 2024
- Infineon Technologies Austria AG
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having low-k dielectric gaps between adj...
- Patent number 11,777,026
- Issue date Oct 3, 2023
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 11,682,704
- Issue date Jun 20, 2023
- Infineon Technologies Austria AG
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switch element and method of manufacturing the same
- Patent number 11,581,369
- Issue date Feb 14, 2023
- Infineon Technologies Austria AG
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with oxygen inserted Si-layers
- Patent number 11,545,545
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,316,020
- Issue date Apr 26, 2022
- Infineon Technologies Austria AG
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with different gate trenches
- Patent number 11,031,479
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Britta Wutte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxygen inserted Si-layers in power semiconductor...
- Patent number 11,031,466
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices with oxygen inserted Si-layers
- Patent number 10,868,172
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench power devices with oxygen inserted Si-layers
- Patent number 10,861,966
- Issue date Dec 8, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superjunction and oxygen inserted Si-layers
- Patent number 10,790,353
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...
- Patent number 10,741,638
- Issue date Aug 11, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced contact implant outdiffusion...
- Patent number 10,580,888
- Issue date Mar 3, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers in vertical trench power devices
- Patent number 10,573,742
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench device with oxygen inserted si-layers
- Patent number 10,510,836
- Issue date Dec 17, 2019
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with different gate trenches
- Patent number 10,418,452
- Issue date Sep 17, 2019
- Infineon Technologies Austria AG
- Britta Wutte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a first gate trench and a second ga...
- Patent number 9,941,354
- Issue date Apr 10, 2018
- Infineon Technologies Austria AG
- Britta Wutte
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Systems and methods for integrating bootstrap circuit elements in p...
- Patent number 9,530,773
- Issue date Dec 27, 2016
- Infineon Technologies Austria AG
- Martin Vielemeyer
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated circuit with first and second switching devices, half br...
- Patent number 9,502,401
- Issue date Nov 22, 2016
- Infineon Technologies Austria AG
- Sylvain Léomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for integrating bootstrap circuit elements in p...
- Patent number 9,171,738
- Issue date Oct 27, 2015
- Infineon Technologies Austria AG
- Martin Vielemeyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESAS BETWEEN ADJACENT GATE...
- Publication number 20230395711
- Publication date Dec 7, 2023
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER, ELECTRONIC COMPONENT AND METHOD USING LINED AND CLOSED SEPAR...
- Publication number 20230097353
- Publication date Mar 30, 2023
- INFINEON TECHNOLOGIES AG
- Oliver BLANK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR GATE SEMICONDUCTOR DEVICE WITH OXYGEN-DOPED SI-LAYERS
- Publication number 20230047420
- Publication date Feb 16, 2023
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING LOW-K DIELECTRIC GAPS BETWEEN ADJ...
- Publication number 20220406930
- Publication date Dec 22, 2022
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING A SEMICONDUCTOR DEVICE
- Publication number 20220231136
- Publication date Jul 21, 2022
- Infineon Technologies Austria AG
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switch Element and Method of Manufacturing the Same
- Publication number 20210183948
- Publication date Jun 17, 2021
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Device with Oxygen Inserted Si-Layers
- Publication number 20200350401
- Publication date Nov 5, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...
- Publication number 20200303498
- Publication date Sep 24, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers
- Publication number 20200152733
- Publication date May 14, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127134
- Publication date Apr 23, 2020
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127135
- Publication date Apr 23, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20200083335
- Publication date Mar 12, 2020
- Sylvain Leomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...
- Publication number 20200052109
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers in Vertical Trench Power Devices
- Publication number 20200052110
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...
- Publication number 20200052066
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Different Gate Trenches
- Publication number 20190371899
- Publication date Dec 5, 2019
- Infineon Technologies Austria AG
- Britta Wutte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Different Gate Trenches
- Publication number 20180226481
- Publication date Aug 9, 2018
- Infineon Technologies Austria AG
- Britta Wutte
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a First Gate Trench and a Second Ga...
- Publication number 20170170274
- Publication date Jun 15, 2017
- Infineon Technologies Austria AG
- Britta Wutte
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Method of Manufacturing an Integrated Circuit
- Publication number 20170047324
- Publication date Feb 16, 2017
- Infineon Technologies Austria AG
- Sylvain Léomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN P...
- Publication number 20160043072
- Publication date Feb 11, 2016
- Infineon Technologies Austria AG
- Martin Vielemeyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit with First and Second Switching Devices, Half Br...
- Publication number 20150048420
- Publication date Feb 19, 2015
- Infineon Technologies Austria AG
- Sylvain Léomant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN P...
- Publication number 20140167069
- Publication date Jun 19, 2014
- Martin Vielemeyer
- H01 - BASIC ELECTRIC ELEMENTS

Sylvain Leomant

Person

Patents Grantslast 30 patents

Semiconductor device with semiconductor mesas between adjacent gate...

Planar gate semiconductor device with oxygen-doped Si-layers

Power semiconductor device having low-k dielectric gaps between adj...

Method of producing a semiconductor device

Semiconductor switch element and method of manufacturing the same

Superjunction device with oxygen inserted Si-layers

Semiconductor device and method

Semiconductor device with different gate trenches

Method of forming oxygen inserted Si-layers in power semiconductor...

Vertical power devices with oxygen inserted Si-layers

Vertical trench power devices with oxygen inserted Si-layers

Semiconductor device with superjunction and oxygen inserted Si-layers

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...

Oxygen inserted Si-layers for reduced contact implant outdiffusion...

Oxygen inserted Si-layers in vertical trench power devices

Gate trench device with oxygen inserted si-layers

Semiconductor device with different gate trenches

Semiconductor device comprising a first gate trench and a second ga...

Systems and methods for integrating bootstrap circuit elements in p...

Integrated circuit with first and second switching devices, half br...

Systems and methods for integrating bootstrap circuit elements in p...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESAS BETWEEN ADJACENT GATE...

WAFER, ELECTRONIC COMPONENT AND METHOD USING LINED AND CLOSED SEPAR...

PLANAR GATE SEMICONDUCTOR DEVICE WITH OXYGEN-DOPED SI-LAYERS

POWER SEMICONDUCTOR DEVICE HAVING LOW-K DIELECTRIC GAPS BETWEEN ADJ...

METHOD OF PRODUCING A SEMICONDUCTOR DEVICE

Semiconductor Switch Element and Method of Manufacturing the Same

Superjunction Device with Oxygen Inserted Si-Layers

Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...

Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers

Vertical Power Devices with Oxygen Inserted Si-Layers

Vertical Trench Power Devices with Oxygen Inserted Si-Layers

Semiconductor Device and Method

OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...

Oxygen Inserted Si-Layers in Vertical Trench Power Devices

Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...

Semiconductor Device with Different Gate Trenches

Semiconductor Device with Different Gate Trenches

Semiconductor Device Comprising a First Gate Trench and a Second Ga...

Method of Manufacturing an Integrated Circuit

SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN P...

Integrated Circuit with First and Second Switching Devices, Half Br...

SYSTEMS AND METHODS FOR INTEGRATING BOOTSTRAP CIRCUIT ELEMENTS IN P...