T. Warren Weeks JR.

Person

Raleigh, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor material having a compositionally-graded transition l...
- Patent number 10,177,229
- Issue date Jan 8, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor structure with compositionally-graded transition layer
- Patent number 9,461,119
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-nitride based semiconductor structure
- Patent number 9,437,687
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with discontinuously graded transition layer
- Patent number 9,437,686
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 9,064,775
- Issue date Jun 23, 2015
- International Rectifier Corporation
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with aluminum nitride intermediate layer
- Patent number 8,937,335
- Issue date Jan 20, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with aluminum nitride alloy intermediate layer
- Patent number 8,928,034
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with gallium nitride alloy intermediate layer
- Patent number 8,928,035
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 8,592,862
- Issue date Nov 26, 2013
- International Rectifier Corporation
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride material devices and methods of forming the same
- Patent number 7,233,028
- Issue date Jun 19, 2007
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Gallium nitride materials including thermally conductive regions
- Patent number 6,956,250
- Issue date Oct 18, 2005
- Nitronex Corporation
- Ricardo Borges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods
- Patent number 6,649,287
- Issue date Nov 18, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials and methods
- Patent number 6,617,060
- Issue date Sep 9, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and methods including backside vias
- Patent number 6,611,002
- Issue date Aug 26, 2003
- Nitronex Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20200243651
- Publication date Jul 30, 2020
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20190229190
- Publication date Jul 25, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
Gallium nitride materials and methods
- Publication number 20190214468
- Publication date Jul 11, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Material Having a Compositionally-Graded Transition L...
- Publication number 20170047407
- Publication date Feb 16, 2017
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
III-Nitride Semiconductor Structure with Intermediate and Transitio...
- Publication number 20160126315
- Publication date May 5, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Based Semiconductor Structure
- Publication number 20150287792
- Publication date Oct 8, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Compositionally-Graded Transition Layer
- Publication number 20150187880
- Publication date Jul 2, 2015
- International Rectifier Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices with Discontinuously Graded Transition Layer
- Publication number 20150108495
- Publication date Apr 23, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Structures With Compositionally-Grade...
- Publication number 20140353680
- Publication date Dec 4, 2014
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
- Publication number 20140131659
- Publication date May 15, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
- Publication number 20140097446
- Publication date Apr 10, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer
- Publication number 20140077222
- Publication date Mar 20, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Compositionally-Graded Transition Layer
- Publication number 20130112990
- Publication date May 9, 2013
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20070295985
- Publication date Dec 27, 2007
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of manufacturing an adaptive AlGaN buffer layer
- Publication number 20060281238
- Publication date Dec 14, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride based high-electron mobility devices
- Publication number 20060278892
- Publication date Dec 14, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing gallium nitride based high-electron mobilit...
- Publication number 20060281284
- Publication date Dec 14, 2006
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride materials including thermally conductive regions
- Publication number 20050127397
- Publication date Jun 16, 2005
- Nitronex Corporation
- Ricardo Borges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices and methods of forming the same
- Publication number 20040130002
- Publication date Jul 8, 2004
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Gallium nitride materials and methods
- Publication number 20040119067
- Publication date Jun 24, 2004
- Nitronex Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor structures including a gallium nitride material compo...
- Publication number 20030132433
- Publication date Jul 17, 2003
- Edwin L. Piner
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride materials and methods
- Publication number 20020187356
- Publication date Dec 12, 2002
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium nitride materials including thermally conductive regions
- Publication number 20020117695
- Publication date Aug 29, 2002
- Ricardo Borges
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride material devices and methods including backside vias
- Publication number 20020117681
- Publication date Aug 29, 2002
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride materials and methods
- Publication number 20020074552
- Publication date Jun 20, 2002
- T. Warren Weeks
- C30 - CRYSTAL GROWTH

T. Warren Weeks JR.

Person

Patents Grantslast 30 patents

Semiconductor material having a compositionally-graded transition l...

Semiconductor structure with compositionally-graded transition layer

III-nitride based semiconductor structure

Gallium nitride devices with discontinuously graded transition layer

Gallium nitride semiconductor structures with compositionally-grade...

Gallium nitride devices with aluminum nitride intermediate layer

Gallium nitride devices with aluminum nitride alloy intermediate layer

Gallium nitride devices with gallium nitride alloy intermediate layer

Gallium nitride semiconductor structures with compositionally-grade...

Gallium nitride material devices and methods of forming the same

Gallium nitride materials including thermally conductive regions

Gallium nitride materials and methods

Gallium nitride materials and methods

Gallium nitride material devices and methods including backside vias

Patents Applicationslast 30 patents

GALLIUM NITRIDE MATERIALS AND METHODS

GALLIUM NITRIDE MATERIALS AND METHODS

Gallium nitride materials and methods

Semiconductor Material Having a Compositionally-Graded Transition L...

III-Nitride Semiconductor Structure with Intermediate and Transitio...

III-Nitride Based Semiconductor Structure

Semiconductor Structure with Compositionally-Graded Transition Layer

Gallium Nitride Devices with Discontinuously Graded Transition Layer

Gallium Nitride Semiconductor Structures With Compositionally-Grade...

Gallium Nitride Devices With Aluminum Nitride Intermediate Layer

Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer

Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer

Gallium Nitride Devices with Compositionally-Graded Transition Layer

GALLIUM NITRIDE MATERIAL DEVICES AND METHODS OF FORMING THE SAME

Method of manufacturing an adaptive AlGaN buffer layer

Gallium nitride based high-electron mobility devices

Method of manufacturing gallium nitride based high-electron mobilit...

Gallium nitride materials including thermally conductive regions

Gallium nitride material devices and methods of forming the same

Gallium nitride materials and methods

Semiconductor structures including a gallium nitride material compo...

Gallium nitride materials and methods

Gallium nitride materials including thermally conductive regions

Gallium nitride material devices and methods including backside vias

Gallium nitride materials and methods