Ta-Ming Kuan

Person

Zhongli City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a semiconductor structure
- Patent number 9,922,827
- Issue date Mar 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained MOS device and methods for forming the same
- Patent number 9,530,865
- Issue date Dec 27, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Ming Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor structure
- Patent number 9,040,393
- Issue date May 26, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices having elevated source/drain regions
- Patent number 8,569,837
- Issue date Oct 29, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained MOS device and methods for forming the same
- Patent number 8,536,619
- Issue date Sep 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Ming Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a transistor with a strained channel
- Patent number 8,236,658
- Issue date Aug 7, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Ming Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with localized stressor
- Patent number 8,158,474
- Issue date Apr 17, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus of fluorine passivation
- Patent number 8,106,469
- Issue date Jan 31, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal stress memorization technology
- Patent number 7,985,652
- Issue date Jul 26, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Hu Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with localized stressor
- Patent number 7,825,477
- Issue date Nov 2, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20150249011
- Publication date Sep 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained MOS Device and Methods for Forming the Same
- Publication number 20130323900
- Publication date Dec 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Ming Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20120015503
- Publication date Jan 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS OF FLUORINE PASSIVATION
- Publication number 20110169104
- Publication date Jul 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device With Localized Stressor
- Publication number 20100330755
- Publication date Dec 30, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A TRANSISTOR WITH A STRAINED CHANNEL
- Publication number 20100308379
- Publication date Dec 9, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Ming Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Stress Memorization Technology
- Publication number 20090075442
- Publication date Mar 19, 2009
- Chung-Hu Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS devices having elevated source/drain regions
- Publication number 20080277735
- Publication date Nov 13, 2008
- Chih-Hsin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Localized Stressor
- Publication number 20080258233
- Publication date Oct 23, 2008
- Ru-Shang Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained MOS device and methods for forming the same
- Publication number 20080185617
- Publication date Aug 7, 2008
- Ta-Ming Kuan
- H01 - BASIC ELECTRIC ELEMENTS

Ta-Ming Kuan

Person

Patents Grantslast 30 patents

Method of forming a semiconductor structure

Strained MOS device and methods for forming the same

Method of forming semiconductor structure

MOS devices having elevated source/drain regions

Strained MOS device and methods for forming the same

Methods for forming a transistor with a strained channel

Semiconductor device with localized stressor

Methods and apparatus of fluorine passivation

Metal stress memorization technology

Semiconductor device with localized stressor

Patents Applicationslast 30 patents

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

Strained MOS Device and Methods for Forming the Same

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

METHODS AND APPARATUS OF FLUORINE PASSIVATION

Semiconductor Device With Localized Stressor

METHODS FOR FORMING A TRANSISTOR WITH A STRAINED CHANNEL

Metal Stress Memorization Technology

MOS devices having elevated source/drain regions

Semiconductor Device with Localized Stressor

Strained MOS device and methods for forming the same