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Sijhih City, TW
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Patents Grants
last 30 patents
Information
Patent Grant
Highly strained source/drain trenches in semiconductor devices
Patent number
10,868,166
Issue date
Dec 15, 2020
Taiwan Semiconductor Manufacturing Co., Ltd.
Ta-Wei Kao
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for forming highly strained source/drain trenches
Patent number
8,071,481
Issue date
Dec 6, 2011
Taiwan Semiconductor Manufacturing Co., Ltd.
Ta-Wei Kao
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
HIGHLY STRAINED SOURCE/DRAIN TRENCHES IN SEMICONDUCTOR DEVICES
Publication number
20120018786
Publication date
Jan 26, 2012
Taiwan Semiconductor Manufacturing Co., LTD
Ta-Wei KAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR FORMING HIGHLY STRAINED SOURCE/DRAIN TRENCHES
Publication number
20100270598
Publication date
Oct 28, 2010
Taiwan Semiconductor Manufacturing Co., LTD
Ta-Wei KAO
H01 - BASIC ELECTRIC ELEMENTS