Ta-Wei Wang

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Defect-Free SiGe source/drain formation by epitaxy-free process
- Patent number 9,899,519
- Issue date Feb 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device design
- Patent number 9,711,413
- Issue date Jul 18, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device design
- Patent number 9,159,629
- Issue date Oct 13, 2015
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating silicon-on-nothing MOSFETs
- Patent number 9,070,774
- Issue date Jun 30, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect-free SiGe source/drain formation by epitaxy-free process
- Patent number 8,900,980
- Issue date Dec 2, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device design
- Patent number 8,507,951
- Issue date Aug 13, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with in-channel and laterally positioned stressors
- Patent number 8,154,051
- Issue date Apr 10, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating silicon-on-nothing MOSFETs
- Patent number 8,106,468
- Issue date Jan 31, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS devices and methods for making same
- Patent number 8,067,280
- Issue date Nov 29, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance transistor with a highly stressed channel
- Patent number 7,649,233
- Issue date Jan 19, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with reduced recess on substrate surface
- Patent number 7,642,607
- Issue date Jan 5, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen treatment to improve high-k gate dielectrics
- Patent number 7,564,108
- Issue date Jul 21, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device design
- Patent number 7,465,972
- Issue date Dec 16, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance transistor with a highly stressed channel
- Patent number 7,323,392
- Issue date Jan 29, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Smart grading implant with diffusion retarding implant for making i...
- Patent number 7,320,921
- Issue date Jan 22, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance transistors with SiGe strain
- Patent number 7,268,362
- Issue date Sep 11, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance MOS device with graded silicide
- Patent number 7,253,481
- Issue date Aug 7, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High Performance CMOS Device Design
- Publication number 20160035627
- Publication date Feb 4, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect-Free SiGe Source/Drain Formation by Epitaxy-Free Process
- Publication number 20150054030
- Publication date Feb 26, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance CMOS Device Design
- Publication number 20130323899
- Publication date Dec 5, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Fabricating Silicon-on-Nothing MOSFETs
- Publication number 20120094456
- Publication date Apr 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Fabricating Silicon-on-Nothing MOSFETs
- Publication number 20090315074
- Publication date Dec 24, 2009
- Ta-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance CMOS Device Design
- Publication number 20090090935
- Publication date Apr 9, 2009
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE CMOS DEVICES AND METHODS FOR MAKING SAME
- Publication number 20080305590
- Publication date Dec 11, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance Transistor with a Highly Stressed Channel
- Publication number 20080087892
- Publication date Apr 17, 2008
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS transistor with in-channel and laterally positioned stressors
- Publication number 20080054301
- Publication date Mar 6, 2008
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance transistor with a highly stressed channel
- Publication number 20070231999
- Publication date Oct 4, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Defect-free SiGe source/drain formation by epitaxy-free process
- Publication number 20070173022
- Publication date Jul 26, 2007
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS devices with reduced recess on substrate surface
- Publication number 20070034906
- Publication date Feb 15, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance MOS device with graded silicide
- Publication number 20070013010
- Publication date Jan 18, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Smart grading implant with diffusion retarding implant for making i...
- Publication number 20060216900
- Publication date Sep 28, 2006
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance transistors with SiGe strain
- Publication number 20060194387
- Publication date Aug 31, 2006
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS device design
- Publication number 20060163672
- Publication date Jul 27, 2006
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen treatment to improve high-k gate dielectrics
- Publication number 20060131672
- Publication date Jun 22, 2006
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS devices and methods for making same
- Publication number 20060113591
- Publication date Jun 1, 2006
- Chih-Hao Wan
- H01 - BASIC ELECTRIC ELEMENTS

Ta-Wei Wang

Person

Patents Grantslast 30 patents

Defect-Free SiGe source/drain formation by epitaxy-free process

High performance CMOS device design

High performance CMOS device design

Process for fabricating silicon-on-nothing MOSFETs

Defect-free SiGe source/drain formation by epitaxy-free process

High performance CMOS device design

MOS transistor with in-channel and laterally positioned stressors

Process for fabricating silicon-on-nothing MOSFETs

High performance CMOS devices and methods for making same

High performance transistor with a highly stressed channel

MOS devices with reduced recess on substrate surface

Nitrogen treatment to improve high-k gate dielectrics

High performance CMOS device design

High performance transistor with a highly stressed channel

Smart grading implant with diffusion retarding implant for making i...

High performance transistors with SiGe strain

High performance MOS device with graded silicide

Patents Applicationslast 30 patents

High Performance CMOS Device Design

Defect-Free SiGe Source/Drain Formation by Epitaxy-Free Process

High Performance CMOS Device Design

Process for Fabricating Silicon-on-Nothing MOSFETs

Process for Fabricating Silicon-on-Nothing MOSFETs

High Performance CMOS Device Design

HIGH PERFORMANCE CMOS DEVICES AND METHODS FOR MAKING SAME

High Performance Transistor with a Highly Stressed Channel

MOS transistor with in-channel and laterally positioned stressors

High performance transistor with a highly stressed channel

Defect-free SiGe source/drain formation by epitaxy-free process

MOS devices with reduced recess on substrate surface

High performance MOS device with graded silicide

Smart grading implant with diffusion retarding implant for making i...

High performance transistors with SiGe strain

High performance CMOS device design

Nitrogen treatment to improve high-k gate dielectrics

High performance CMOS devices and methods for making same