Tadakatsu OHKUBO

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Emitter, electron gun in which same is used, electronic device in w...
- Patent number 11,915,920
- Issue date Feb 27, 2024
- National Institute for Materials Science
- Jie Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element containing two non-magnetic layers...
- Patent number 11,585,873
- Issue date Feb 21, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic element, magnetic memory device, and magnetic sensor
- Patent number 11,133,459
- Issue date Sep 28, 2021
- National Institute of Advanced Industrial Science and Technology
- Takayuki Nozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction, magnetoresistive element and spintronics...
- Patent number 11,105,867
- Issue date Aug 31, 2021
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance element in which I-III-VI2 compound semiconducto...
- Patent number 11,004,465
- Issue date May 11, 2021
- National Institute for Materials Science
- Shinya Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Underlayer for perpendicularly magnetized film, perpendicularly mag...
- Patent number 10,832,719
- Issue date Nov 10, 2020
- National Institute for Materials Science
- Hiroaki Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and method for manufacturing the same
- Patent number 10,665,776
- Issue date May 26, 2020
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 10,305,027
- Issue date May 28, 2019
- Kabushiki Kaisha Toshiba
- Yushi Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Underlayer for perpendicularly magnetized film, perpendicularly mag...
- Patent number 10,199,063
- Issue date Feb 5, 2019
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetization film, perpendicular magnetization film...
- Patent number 9,842,636
- Issue date Dec 12, 2017
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic tunnel junction structure and magnetoresistive effect...
- Patent number 8,872,291
- Issue date Oct 28, 2014
- National Institute for Materials Science
- Hiroaki Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RARE-EARTH MAGNET
- Publication number 20230066150
- Publication date Mar 2, 2023
- LG ELECTRONICS INC.
- Sunyong SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOCRYSTALLINE SOFT MAGNETIC ALLOY
- Publication number 20230049280
- Publication date Feb 16, 2023
- TOHOKU MAGNET INSTITUTE CO., LTD.
- Tatsuya Tomita
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...
- Publication number 20230009284
- Publication date Jan 12, 2023
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
EMITTER, ELECTRON GUN IN WHICH SAME IS USED, ELECTRONIC DEVICE IN W...
- Publication number 20220406552
- Publication date Dec 22, 2022
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Jie TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION, MAGNETORESISTIVE ELEMENT AND SPINTRONICS...
- Publication number 20210123991
- Publication date Apr 29, 2021
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC ELEMENT, MAGNETIC MEMORY DEVICE, AND MAGNETIC SENSOR
- Publication number 20210036217
- Publication date Feb 4, 2021
- National Institute of Advanced Industrial Science and Technology
- Takayuki NOZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190259937
- Publication date Aug 22, 2019
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTANCE ELEMENT IN WHICH I-III-VI2 COMPOUND SEMICONDUCTO...
- Publication number 20190237099
- Publication date Aug 1, 2019
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Shinya KASAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...
- Publication number 20190172486
- Publication date Jun 6, 2019
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20180090671
- Publication date Mar 29, 2018
- KABUSHIKI KAISHA TOSHIBA
- Yushi KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...
- Publication number 20170140784
- Publication date May 18, 2017
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM...
- Publication number 20160314825
- Publication date Oct 27, 2016
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect...
- Publication number 20130221461
- Publication date Aug 29, 2013
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING RARE EARTH PERMANENT MAGNETS, AND RARE EARTH P...
- Publication number 20130068992
- Publication date Mar 21, 2013
- Kazuhiro Hono
- C21 - METALLURGY OF IRON

Tadakatsu OHKUBO

Person

Patents Grantslast 30 patents

Emitter, electron gun in which same is used, electronic device in w...

Magnetoresistive effect element containing two non-magnetic layers...

Magnetic element, magnetic memory device, and magnetic sensor

Magnetic tunnel junction, magnetoresistive element and spintronics...

Magneto-resistance element in which I-III-VI2 compound semiconducto...

Underlayer for perpendicularly magnetized film, perpendicularly mag...

Magnetoresistance effect element and method for manufacturing the same

Magnetoresistive element and magnetic memory device

Underlayer for perpendicularly magnetized film, perpendicularly mag...

Perpendicular magnetization film, perpendicular magnetization film...

Ferromagnetic tunnel junction structure and magnetoresistive effect...

Patents Applicationslast 30 patents

RARE-EARTH MAGNET

NANOCRYSTALLINE SOFT MAGNETIC ALLOY

MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...

EMITTER, ELECTRON GUN IN WHICH SAME IS USED, ELECTRONIC DEVICE IN W...

MAGNETIC TUNNEL JUNCTION, MAGNETORESISTIVE ELEMENT AND SPINTRONICS...

MAGNETIC ELEMENT, MAGNETIC MEMORY DEVICE, AND MAGNETIC SENSOR

MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

MAGNETO-RESISTANCE ELEMENT IN WHICH I-III-VI2 COMPOUND SEMICONDUCTO...

UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE

UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...

PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM...

Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect...

METHOD FOR PRODUCING RARE EARTH PERMANENT MAGNETS, AND RARE EARTH P...