Tadashi Matsuno

Person

Oita-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device manufacturing method and semiconductor device
- Patent number 6,368,951
- Issue date Apr 9, 2002
- Kabushiki Kaisha Toshiba
- Kazuyuki Higashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method and semiconductor device
- Patent number 6,291,891
- Issue date Sep 18, 2001
- Kabushiki Kaisha Toshiba
- Kazuyuki Higashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus having wiring groove and contact hole in se...
- Patent number 6,163,067
- Issue date Dec 19, 2000
- Kabushiki Kaisha Toshiba
- Masahiro Inohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,127,256
- Issue date Oct 3, 2000
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 6,051,508
- Issue date Apr 18, 2000
- Kabushiki Kaisha Toshiba
- Tamao Takase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved adhesion between titanium-based...
- Patent number 6,046,502
- Issue date Apr 4, 2000
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved adhesion between titanium-based...
- Patent number 6,004,887
- Issue date Dec 21, 1999
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor apparatus having wiring groove and c...
- Patent number 5,976,972
- Issue date Nov 2, 1999
- Kabushiki Kaisha Toshiba
- Masahiro Inohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having multi-layer wir...
- Patent number 5,966,634
- Issue date Oct 12, 1999
- Kabushiki Kaisha Toshiba
- Masahiro Inohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using chemical mechani...
- Patent number 5,948,698
- Issue date Sep 7, 1999
- Kabushiki Kaisha Toshiba
- Masahiro Inohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved adhesion between titanium-based...
- Patent number 5,874,779
- Issue date Feb 23, 1999
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a second insulating layer which include...
- Patent number 5,850,102
- Issue date Dec 15, 1998
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device having an improved buried el...
- Patent number 5,759,915
- Issue date Jun 2, 1998
- Kabushiki Kaisha Toshiba
- Noriaki Matsunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved adhesion between titanium-based...
- Patent number 5,753,975
- Issue date May 19, 1998
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,106,782
- Issue date Apr 21, 1992
- Kabushiki Kaisha Toshiba
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
- Publication number 20160079477
- Publication date Mar 17, 2016
- Kabushiki Kaisha Toshiba
- Tadashi MATSUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20160071726
- Publication date Mar 10, 2016
- Kabushiki Kaisha Toshiba
- Hiroshi MIZUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device and a semiconductor...
- Publication number 20040256733
- Publication date Dec 23, 2004
- Tadashi Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a conductive layer and a manufacturing...
- Publication number 20040211958
- Publication date Oct 28, 2004
- Kabushiki Kaisha Toshiba
- Hideki Osamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device manufacturing method and semiconductor device
- Publication number 20010038147
- Publication date Nov 8, 2001
- KABUSHIKI KAISHA TOSHIBA
- Kazuyuki Higashi
- H01 - BASIC ELECTRIC ELEMENTS

Tadashi Matsuno

Person

Patents Grantslast 30 patents

Semiconductor device manufacturing method and semiconductor device

Semiconductor device manufacturing method and semiconductor device

Semiconductor apparatus having wiring groove and contact hole in se...

Semiconductor device and method of manufacturing the same

Manufacturing method of semiconductor device

Semiconductor device with improved adhesion between titanium-based...

Semiconductor device with improved adhesion between titanium-based...

Method of making semiconductor apparatus having wiring groove and c...

Method of manufacturing semiconductor device having multi-layer wir...

Manufacturing method of semiconductor device using chemical mechani...

Semiconductor device with improved adhesion between titanium-based...

Semiconductor device having a second insulating layer which include...

Method of forming semiconductor device having an improved buried el...

Semiconductor device with improved adhesion between titanium-based...

Method of manufacturing a semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR LIGHT-EMITTING ELEMENT

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Method for manufacturing a semiconductor device and a semiconductor...

Semiconductor device having a conductive layer and a manufacturing...

Semiconductor device manufacturing method and semiconductor device