Tadashi Ohashi

Person

Yamaguchi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Barrel type susceptor
- Patent number 7,276,125
- Issue date Oct 2, 2007
- Toshiba Ceramics Co., Ltd.
- Toshikazu Miyamoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of chemically growing a thin film in a gas phase on a silico...
- Patent number 6,537,924
- Issue date Mar 25, 2003
- Toshiba Ceramics, Co., Ltd.
- Shuji Tobashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus for reduced-pressure epitaxial growth and method of contr...
- Patent number 6,485,573
- Issue date Nov 26, 2002
- Toshiba Ceramics Co., Ltd.
- Katsuyuki Iwata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for controlling rise and fall of temperature i...
- Patent number 6,461,428
- Issue date Oct 8, 2002
- Toshiba Ceramics Co., Ltd.
- Shyuji Tobashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Wafer heating device and method of controlling the same
- Patent number 6,250,914
- Issue date Jun 26, 2001
- Toshiba Machine Co., Ltd.
- Hirofumi Katsumata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for manufacturing a product of glassy carbon
- Patent number 6,245,313
- Issue date Jun 12, 2001
- Toshiba Machine Co., Ltd.
- Kunihiko Suzuki
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Vapor deposition apparatus and vapor deposition method
- Patent number 6,132,519
- Issue date Oct 17, 2000
- Toshiba Ceramics Co., Ltd.
- Tadashi Ohashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-speed rotational vapor deposition apparatus and high-speed rot...
- Patent number 6,113,705
- Issue date Sep 5, 2000
- Toshiba Ceramics Co., Ltd.
- Tadashi Ohashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Vapor deposition apparatus and method for forming thin film
- Patent number 6,059,885
- Issue date May 9, 2000
- Toshiba Ceramics Co., Ltd.
- Tadashi Ohashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth method
- Patent number 5,904,769
- Issue date May 18, 1999
- Toshiba Ceramics Co., Ltd.
- Tadashi Ohashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase growth apparatus
- Patent number 5,868,850
- Issue date Feb 9, 1999
- Toshiba Ceramics Co., Ltd.
- Masahiko Ichishima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ceramic membrane device and a method of producing the same
- Patent number 5,178,727
- Issue date Jan 12, 1993
- Toshiba Ceramics Co., Ltd.
- Eiichi Toya
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Susceptor
- Patent number 5,074,017
- Issue date Dec 24, 1991
- Toshiba Ceramics Co., Ltd.
- Eiichi Toya
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Barrel type susceptor
- Publication number 20050160991
- Publication date Jul 28, 2005
- TOSHIBA CERAMICS CO., LTD.
- Toshikazu Miyamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Wafer transfer method performed with vapor thin film growth system...
- Publication number 20030045128
- Publication date Mar 6, 2003
- Toshiba Kikai Kabushiki Kaisha
- Shyuji Tobashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Wafer transfer method performed with vapor thin film growth system...
- Publication number 20020182892
- Publication date Dec 5, 2002
- Hideki Arai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of chemically growing a thin film in a gas phase on a silico...
- Publication number 20020045009
- Publication date Apr 18, 2002
- TOSHIBA CERAMICS CO., LTD.
- Shuji Tobashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of growing a thin film in gaseous phase and apparatus for gr...
- Publication number 20020009868
- Publication date Jan 24, 2002
- TOSHIBA CERAMICS CO., LTD.
- Shyuji Tobashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus for reduced-pressure epitaxial growth and method of contr...
- Publication number 20010052316
- Publication date Dec 20, 2001
- TOSHIBA CERAMICS CO., LTD.
- Katsuyuki Iwata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and apparatus for controlling rise and fall of temperature i...
- Publication number 20010020439
- Publication date Sep 13, 2001
- Shyuji Tobashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Tadashi Ohashi

Person

Patents Grantslast 30 patents

Barrel type susceptor

Method of chemically growing a thin film in a gas phase on a silico...

Apparatus for reduced-pressure epitaxial growth and method of contr...

Method and apparatus for controlling rise and fall of temperature i...

Wafer heating device and method of controlling the same

Process for manufacturing a product of glassy carbon

Vapor deposition apparatus and vapor deposition method

High-speed rotational vapor deposition apparatus and high-speed rot...

Vapor deposition apparatus and method for forming thin film

Epitaxial growth method

Vapor phase growth apparatus

Ceramic membrane device and a method of producing the same

Susceptor

Patents Applicationslast 30 patents

Barrel type susceptor

Wafer transfer method performed with vapor thin film growth system...

Wafer transfer method performed with vapor thin film growth system...

Method of chemically growing a thin film in a gas phase on a silico...

Method of growing a thin film in gaseous phase and apparatus for gr...

Apparatus for reduced-pressure epitaxial growth and method of contr...

Method and apparatus for controlling rise and fall of temperature i...