Tadashige Sato

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium arsenide phosphide epitaxial wafer and light emitting diode
- Patent number 6,218,681
- Issue date Apr 17, 2001
- Mitsubishi Chemical Corporation
- Tadashige Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode with tilted plane orientation
- Patent number 5,923,054
- Issue date Jul 13, 1999
- Mutsubishi Chemical Corporation
- Yasuji Kobashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and its fabrication method
- Patent number 5,856,208
- Issue date Jan 5, 1999
- Mitsubishi Chemical Corporation
- Tadashige Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer of gallium arsenide phosphide
- Patent number 5,751,026
- Issue date May 12, 1998
- Mitsubishi Kasei Corporation
- Tadashige Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing semiconductor epitaxial wafer
- Patent number 5,660,628
- Issue date Aug 26, 1997
- Mitsubishi Kasei Corp.
- Tadashige Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer of gallium arsenide phosphide
- Patent number 5,456,765
- Issue date Oct 10, 1995
- Mitsubishi Kasei Corporation
- Tadashige Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Double hetero type epitaxial wafer with refractive indices
- Patent number 5,103,270
- Issue date Apr 7, 1992
- Mitsubishi Monsanto Chemical Company
- Tadashige Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer
- Patent number 4,946,801
- Issue date Aug 7, 1990
- Mitsubishi Monsanto Chemical Co., Ltd.
- Tadashige Sato
- F01 - MACHINES OR ENGINES IN GENERAL ENGINE PLANTS IN GENERAL STEAM ENGINES

Tadashige Sato

Person

Patents Grantslast 30 patents

Gallium arsenide phosphide epitaxial wafer and light emitting diode

Light emitting diode with tilted plane orientation

Epitaxial wafer and its fabrication method

Epitaxial wafer of gallium arsenide phosphide

Method of manufacturing semiconductor epitaxial wafer

Epitaxial wafer of gallium arsenide phosphide

Double hetero type epitaxial wafer with refractive indices

Epitaxial wafer