Tadatomo Kazuyuki

Person

Itami, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor base and its manufacturing method, and semiconductor...
- Patent number 7,589,001
- Issue date Sep 15, 2009
- Mitsubishi Chemical Corporation
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor base and its manufacturing method, and semiconductor...
- Patent number 7,504,324
- Issue date Mar 17, 2009
- Mitsubishi Chemical Corporation
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor base material and method of manufacturing the material
- Patent number 7,179,667
- Issue date Feb 20, 2007
- Mitsubishi Cable Industries, Ltd.
- Hiroaki Okagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor base and its manufacturing method, and semiconductor...
- Patent number 7,115,486
- Issue date Oct 3, 2006
- Mitsubishi Cable Industries Ltd.
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN group semiconductor light-emitting element with concave and con...
- Patent number 7,053,420
- Issue date May 30, 2006
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor base and its manufacturing method, and semiconductor...
- Patent number 6,940,098
- Issue date Sep 6, 2005
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN compound semiconductor crystal and semicondu...
- Patent number 6,794,210
- Issue date Sep 21, 2004
- Mitsubishi Cable Industries, Ltd.
- Yoichiro Ouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light receiving element
- Patent number 6,734,515
- Issue date May 11, 2004
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for growing GaN compound semiconductor crystal and semicondu...
- Patent number 6,700,179
- Issue date Mar 2, 2004
- Mitsubishi Cable Industries, Ltd.
- Yoichiro Ouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GAN group crystal base member having low dislocation density, use t...
- Patent number 6,225,650
- Issue date May 1, 2001
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal
- Patent number 5,810,925
- Issue date Sep 22, 1998
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride based light emitter
- Patent number 5,793,061
- Issue date Aug 11, 1998
- Mitsubishi Cable Industries, Ltd.
- Youichiro Ohuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gan single crystal
- Patent number 5,770,887
- Issue date Jun 23, 1998
- Mitsubishi Cable Industries, Ltd.
- Kazuyuki Tadatomo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting element with In GaAlP active layer of...
- Patent number 5,710,440
- Issue date Jan 20, 1998
- Mitsubishi Cable Industries, Ltd.
- Hiroaki Okagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element with a current diffusing layer...
- Patent number 5,635,733
- Issue date Jun 3, 1997
- Mitsubishi Cable Industries, Ltd.
- Hiroaki Okagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element
- Patent number 5,631,475
- Issue date May 20, 1997
- Mitsubishi Cable Industries, Ltd.
- Shinichi Watabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element with reflecting layers
- Patent number 5,414,281
- Issue date May 9, 1995
- Mitsubishi Cable Industries, Ltd.
- Shinichi Watabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material for light emitting element and method for crystal growth t...
- Patent number 4,944,811
- Issue date Jul 31, 1990
- Tokuzo Sukegawa
- Tokuzo Sukegawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Nitride Semiconductor Light-Emitting Device
- Publication number 20080048194
- Publication date Feb 28, 2008
- Hiromitsu Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor base and its manufacturing method, and semiconductor...
- Publication number 20070026643
- Publication date Feb 1, 2007
- MITSUBISHI CABLE INDUSTRIES, LTD.
- Kazuyuki Tadatomo
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor base and its manufacturing method, and semiconductor...
- Publication number 20070026644
- Publication date Feb 1, 2007
- MITSUBISHI CABLE INDUSTRIES, LTD.
- Kazuyuki Tadatomo
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor base and its manufacturing method, and semiconductor...
- Publication number 20040206299
- Publication date Oct 21, 2004
- MITSUBISHI CABLE INDUSTRIES, LTD.
- Kazuyuki Tadatomo
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor light-emitting device
- Publication number 20040113166
- Publication date Jun 17, 2004
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for growing GaN compound semiconductor crystal and semicondu...
- Publication number 20040094084
- Publication date May 20, 2004
- MITSUBISHI CABLE INDUSTRIES, LTD.
- Yoichiro Ouchi
- C30 - CRYSTAL GROWTH
Information Patent Application
Multi-wavelength luminous element
- Publication number 20040056258
- Publication date Mar 25, 2004
- Kazuyuki Tadatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor base material and method of manufacturing the material
- Publication number 20040048471
- Publication date Mar 11, 2004
- Hiroaki Okagawa
- C30 - CRYSTAL GROWTH

Tadatomo Kazuyuki

Person

Patents Grantslast 30 patents

Semiconductor base and its manufacturing method, and semiconductor...

Semiconductor base and its manufacturing method, and semiconductor...

Semiconductor base material and method of manufacturing the material

Semiconductor base and its manufacturing method, and semiconductor...

GaN group semiconductor light-emitting element with concave and con...

Semiconductor base and its manufacturing method, and semiconductor...

Method for growing GaN compound semiconductor crystal and semicondu...

Semiconductor light receiving element

Method for growing GaN compound semiconductor crystal and semicondu...

GAN group crystal base member having low dislocation density, use t...

GaN single crystal

Group-III nitride based light emitter

Gan single crystal

Semiconductor light emitting element with In GaAlP active layer of...

Semiconductor light emitting element with a current diffusing layer...

Semiconductor light emitting element

Semiconductor light emitting element with reflecting layers

Material for light emitting element and method for crystal growth t...

Patents Applicationslast 30 patents

Nitride Semiconductor Light-Emitting Device

Semiconductor base and its manufacturing method, and semiconductor...

Semiconductor base and its manufacturing method, and semiconductor...

Semiconductor base and its manufacturing method, and semiconductor...

Semiconductor light-emitting device

Method for growing GaN compound semiconductor crystal and semicondu...

Multi-wavelength luminous element

Semiconductor base material and method of manufacturing the material