Tae Mochizuki

Person

Ushiku-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 11,987,903
- Issue date May 21, 2024
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,591,715
- Issue date Feb 28, 2023
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,038,024
- Issue date Jun 15, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,031,475
- Issue date Jun 8, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,001,940
- Issue date May 11, 2021
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,903,072
- Issue date Jan 26, 2021
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,796,904
- Issue date Oct 6, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and C-plane GaN substrate
- Patent number 10,720,326
- Issue date Jul 21, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 10,475,887
- Issue date Nov 12, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 10,301,743
- Issue date May 28, 2019
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20230253461
- Publication date Aug 10, 2023
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20210273058
- Publication date Sep 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20210230770
- Publication date Jul 29, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20210164127
- Publication date Jun 3, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20210090886
- Publication date Mar 25, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GAN SUBSTRATE
- Publication number 20200350163
- Publication date Nov 5, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20200303187
- Publication date Sep 24, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20200013860
- Publication date Jan 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20190312111
- Publication date Oct 10, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20190189438
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20190189439
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20190127881
- Publication date May 2, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20170327971
- Publication date Nov 16, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20160233306
- Publication date Aug 11, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH

Tae Mochizuki

Person

Patents Grantslast 30 patents

Self-standing GaN substrate, GaN crystal, method for producing GaN...

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Conductive C-plane GaN substrate

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN single crystal and method for manufacturing GaN single crystal

Method for growing GaN crystal and c-plane GaN substrate

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN single crystal and method for manufacturing GaN single crystal

Conductive C-plane GaN substrate

Conductive C-plane GaN substrate

Method for growing GaN crystal and C-plane GaN substrate

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN single crystal and method for manufacturing GaN single crystal

Patents Applicationslast 30 patents

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

CONDUCTIVE C-PLANE GaN SUBSTRATE

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

CONDUCTIVE C-PLANE GaN SUBSTRATE

CONDUCTIVE C-PLANE GAN SUBSTRATE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...