Taehui Na

Person

Seoul, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device and operating method of memory device
- Patent number 11,475,948
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Jongryul Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with reduced read disturbance and method of operating...
- Patent number 11,127,457
- Issue date Sep 21, 2021
- Samsung Electronics Co., Ltd.
- Jongryul Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device
- Patent number 11,100,959
- Issue date Aug 24, 2021
- Samsung Electronics Co., Ltd.
- Kyu-Rie Sim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device for avoiding multi-turn on of memory cell during read...
- Patent number 11,100,990
- Issue date Aug 24, 2021
- Samsung Electronics Co., Ltd.
- Ji-Hoon Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having an increased sensing margin
- Patent number 11,011,228
- Issue date May 18, 2021
- Samsung Electronics Co., Ltd.
- Yongsung Cho
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of operating the same
- Patent number 10,998,038
- Issue date May 4, 2021
- Samsung Electronics Co., Ltd.
- Jongryul Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Error correction and decoding
- Patent number 10,263,645
- Issue date Apr 16, 2019
- QUALCOMM Incorporated
- Seong-Ook Jung
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC),...
- Patent number 9,852,783
- Issue date Dec 26, 2017
- QUALCOMM Technologies, Inc.
- Taehui Na
- G11 - INFORMATION STORAGE
Information Patent Grant
Error correction and decoding
- Patent number 9,800,271
- Issue date Oct 24, 2017
- QUALCOMM Incorporated
- Seong-Ook Jung
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells e...
- Patent number 9,728,259
- Issue date Aug 8, 2017
- QUALCOMM Technologies, Inc.
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Latch offset cancelation for magnetoresistive random access memory
- Patent number 9,691,462
- Issue date Jun 27, 2017
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual mode sensing scheme
- Patent number 9,666,259
- Issue date May 30, 2017
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing circuit for resistive memory cells
- Patent number 9,502,091
- Issue date Nov 22, 2016
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Constant sensing current for reading resistive memory
- Patent number 9,502,088
- Issue date Nov 22, 2016
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
System, apparatus, and method for an offset cancelling single ended...
- Patent number 9,406,354
- Issue date Aug 2, 2016
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method of sensing a memory cell
- Patent number 9,390,779
- Issue date Jul 12, 2016
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
System, apparatus, and method for sense amplifiers
- Patent number 9,378,781
- Issue date Jun 28, 2016
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
System and method to provide a reference cell using magnetic tunnel...
- Patent number 9,281,039
- Issue date Mar 8, 2016
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Offset canceling dual stage sensing circuit
- Patent number 9,165,630
- Issue date Oct 20, 2015
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
NMOS-offset canceling current-latched sense amplifier
- Patent number 9,111,623
- Issue date Aug 18, 2015
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE
- Publication number 20210090651
- Publication date Mar 25, 2021
- Samsung Electronics Co., Ltd.
- Jongryul KIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
- Publication number 20210027829
- Publication date Jan 28, 2021
- Samsung Electronics Co., Ltd.
- Jongryul Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH REDUCED READ DISTURBANCE AND METHOD OF OPERATING...
- Publication number 20210027837
- Publication date Jan 28, 2021
- Samsung Electronics Co., Ltd.
- Jongryul Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE FOR AVOIDING MULTI-TURN ON OF MEMORY CELL, AND OPERAT...
- Publication number 20210020226
- Publication date Jan 21, 2021
- Samsung Electronics Co., Ltd.
- JI-HOON LIM
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE HAVING AN INCREASED SENSING MARGIN
- Publication number 20210012835
- Publication date Jan 14, 2021
- Samsung Electronics Co., Ltd.
- YONGSUNG CHO
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE
- Publication number 20200234736
- Publication date Jul 23, 2020
- Samsung Electronics Co., Ltd.
- Kyu-Rie SIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ERROR CORRECTION AND DECODING
- Publication number 20180019767
- Publication date Jan 18, 2018
- QUALCOMM Incorporated
- Seong-Ook JUNG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ERROR CORRECTION AND DECODING
- Publication number 20170077963
- Publication date Mar 16, 2017
- QUALCOMM Incorporated
- Seong-Ook JUNG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
REFERENCE VOLTAGE GENERATION FOR SENSING RESISTIVE MEMORY
- Publication number 20160093352
- Publication date Mar 31, 2016
- QUALCOMM Incorporated
- Seong-Ook JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
CONSTANT SENSING CURRENT FOR READING RESISTIVE MEMORY
- Publication number 20160093351
- Publication date Mar 31, 2016
- QUALCOMM Incorporated
- Seong-Ook JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
LATCH OFFSET CANCELATION SENSE AMPLIFIER
- Publication number 20160093350
- Publication date Mar 31, 2016
- QUALCOMM Incorporated
- Seong-Ook JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL STAGE SENSING CURRENT WITH REDUCED PULSE WIDTH FOR READING RES...
- Publication number 20160093353
- Publication date Mar 31, 2016
- QUALCOMM Incorporated
- Seong-Ook JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
NMOS-OFFSET CANCELING CURRENT-LATCHED SENSE AMPLIFIER
- Publication number 20150228322
- Publication date Aug 13, 2015
- Industry-Academic Cooperation Foundation, Yonsei University
- Seong-Ook JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
OFFSET CANCELING DUAL STAGE SENSING CIRCUIT
- Publication number 20150063012
- Publication date Mar 5, 2015
- Industry-Academic Cooperation Foundation
- Seong-Ook JUNG
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD TO PROVIDE A REFERENCE CELL USING MAGNETIC TUNNEL...
- Publication number 20150036409
- Publication date Feb 5, 2015
- Industry-Academic Cooperation Foundation, Yonsei University
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEM AND METHOD OF SENSING A MEMORY CELL
- Publication number 20140269031
- Publication date Sep 18, 2014
- Industry-Academic Cooperation Foundation, Yonsei University
- Seong-Ook Jung
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Memory device and operating method of memory device

Memory device with reduced read disturbance and method of operating...

Variable resistance memory device

Memory device for avoiding multi-turn on of memory cell during read...

Memory device having an increased sensing margin

Memory device and method of operating the same

Error correction and decoding

Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC),...

Error correction and decoding

Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells e...

Latch offset cancelation for magnetoresistive random access memory

Dual mode sensing scheme

Sensing circuit for resistive memory cells

Constant sensing current for reading resistive memory

System, apparatus, and method for an offset cancelling single ended...

System and method of sensing a memory cell

System, apparatus, and method for sense amplifiers

System and method to provide a reference cell using magnetic tunnel...

Offset canceling dual stage sensing circuit

NMOS-offset canceling current-latched sense amplifier

Patents Applicationslast 30 patents

MEMORY DEVICE AND OPERATING METHOD OF MEMORY DEVICE

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

MEMORY DEVICE WITH REDUCED READ DISTURBANCE AND METHOD OF OPERATING...

MEMORY DEVICE FOR AVOIDING MULTI-TURN ON OF MEMORY CELL, AND OPERAT...

MEMORY DEVICE HAVING AN INCREASED SENSING MARGIN

VARIABLE RESISTANCE MEMORY DEVICE

ERROR CORRECTION AND DECODING

ERROR CORRECTION AND DECODING

REFERENCE VOLTAGE GENERATION FOR SENSING RESISTIVE MEMORY

CONSTANT SENSING CURRENT FOR READING RESISTIVE MEMORY

LATCH OFFSET CANCELATION SENSE AMPLIFIER

DUAL STAGE SENSING CURRENT WITH REDUCED PULSE WIDTH FOR READING RES...

NMOS-OFFSET CANCELING CURRENT-LATCHED SENSE AMPLIFIER

OFFSET CANCELING DUAL STAGE SENSING CIRCUIT

SYSTEM AND METHOD TO PROVIDE A REFERENCE CELL USING MAGNETIC TUNNEL...

SYSTEM AND METHOD OF SENSING A MEMORY CELL