Tahir Hussain

Person

Calabasas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Temporary bonding structures for die-to-die and wafer-to-wafer bonding
- Patent number 12,057,429
- Issue date Aug 6, 2024
- HRL Laboratories, LLC
- Aurelio Lopez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated mechanical aids for high accuracy alignable-electrical c...
- Patent number 11,562,984
- Issue date Jan 24, 2023
- HRL Laboratories, LLC
- Peter Brewer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano vacuum gap device with a gate-all-around cathode
- Patent number 9,953,796
- Issue date Apr 24, 2018
- HRL Laboratories, LLC
- Biqin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable high-density wireless neuroelectric sensor and stimulator...
- Patent number 9,880,148
- Issue date Jan 30, 2018
- HRL Laboratories, LLC
- Kyung-Ah Son
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Monolithic integration of GaN and InP components
- Patent number 9,691,761
- Issue date Jun 27, 2017
- HRL Laboratories, LLC
- Pamela R. Patterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scalable high-density wireless neuroelectric sensor and stimulator...
- Patent number 9,662,498
- Issue date May 30, 2017
- HRL Laboratories, LLC
- Kyung-Ah Son
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Transient antennas and transient electronics
- Patent number 9,536,844
- Issue date Jan 3, 2017
- HRL Laboratories, LLC
- Peter D. Brewer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of GaN and InP components
- Patent number 9,515,068
- Issue date Dec 6, 2016
- HRL Laboratories, LLC
- Pamela R. Patterson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristor devices and fabrication
- Patent number 9,450,022
- Issue date Sep 20, 2016
- HRL Laboratories, LLC
- Dana C. Wheeler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure to monitor the in-situ channel temperature of field...
- Patent number 9,383,266
- Issue date Jul 5, 2016
- HRL Laboratories, LLC
- James Chingwei Li
- G01 - MEASURING TESTING
Information Patent Grant
Enhancement mode normally-off gallium nitride heterostructure field...
- Patent number 9,190,534
- Issue date Nov 17, 2015
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal management for heterogeneously integrated technology
- Patent number 9,087,854
- Issue date Jul 21, 2015
- HRL Laboratories, LLC
- Wonill Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped super-lattice base for heterojunction bipolar tran...
- Patent number 8,957,455
- Issue date Feb 17, 2015
- HRL Laboratories, LLC
- James Chingwei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode normally-off gallium nitride heterostructure field...
- Patent number 8,728,884
- Issue date May 20, 2014
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure to monitor the in-situ channel temperature of field...
- Patent number 8,587,037
- Issue date Nov 19, 2013
- HRL Laboratories, LLC
- James Chingwei Li
- G01 - MEASURING TESTING
Information Patent Grant
Carbon-beryllium combinationally doped semiconductor
- Patent number 8,575,659
- Issue date Nov 5, 2013
- HRL Laboratories, LLC
- Steven S. Bui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabricating heterojunction bipolar transis...
- Patent number 8,525,301
- Issue date Sep 3, 2013
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped super-lattice base for heterojunction bipolar tran...
- Patent number 8,178,946
- Issue date May 15, 2012
- HRL Laboratories, LLC
- James Chingwei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact protection using an encapsulation layer
- Patent number 8,030,688
- Issue date Oct 4, 2011
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped super-lattice sub-collector for high-performance H...
- Patent number 7,868,335
- Issue date Jan 11, 2011
- HRL Laboratories, LLC
- James Chingwei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power-low noise microwave GaN heterojunction field effect tran...
- Patent number 7,598,131
- Issue date Oct 6, 2009
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors with low parasitic losses
- Patent number 7,569,872
- Issue date Aug 4, 2009
- HRL Laboratories, LLC
- Rajesh D. Rajavel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact and channel protection in GaN devices using an...
- Patent number 7,566,916
- Issue date Jul 28, 2009
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for fabricating heterojunction bipolar transis...
- Patent number 7,494,887
- Issue date Feb 24, 2009
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power-low noise microwave GaN heterojunction field effect tran...
- Patent number 7,470,941
- Issue date Dec 30, 2008
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors with low parasitic losses
- Patent number 7,368,765
- Issue date May 6, 2008
- HRL Laboratories, LLC
- Rajesh D. Rajavel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for allowing formation of self-aligned base co...
- Patent number 7,229,874
- Issue date Jun 12, 2007
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN DHFET
- Patent number 7,098,490
- Issue date Aug 29, 2006
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic metal contact and channel protection in GaN devices using an...
- Patent number 6,884,704
- Issue date Apr 26, 2005
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic contacts for high electron mobility transistors and a method...
- Patent number 6,852,615
- Issue date Feb 8, 2005
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANO VACUUM GAP DEVICE WITH A GATE-ALL-AROUND CATHODE
- Publication number 20160307722
- Publication date Oct 20, 2016
- Biqin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER
- Publication number 20090250725
- Publication date Oct 8, 2009
- HRL LABORATORIES, LLC
- Tahir HUSSAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic metal contact and channel protection in GaN devices using an...
- Publication number 20050048747
- Publication date Mar 3, 2005
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for allowing formation of self-aligned base co...
- Publication number 20050029625
- Publication date Feb 10, 2005
- HRL Laboratories, LLC
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DHFET
- Publication number 20040238842
- Publication date Dec 2, 2004
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic metal contact and channel protection in GaN devices using an...
- Publication number 20040029330
- Publication date Feb 12, 2004
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic contacts for high electron mobility transistors and a method...
- Publication number 20030227027
- Publication date Dec 11, 2003
- HRL Laboratories, LLC
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High power-low noise microwave GaN heterojunction field effet trans...
- Publication number 20030218183
- Publication date Nov 27, 2003
- Miroslav Micovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion-implantation and shallow etching to produce effective edge term...
- Publication number 20030134482
- Publication date Jul 17, 2003
- Tahir Hussain
- H01 - BASIC ELECTRIC ELEMENTS

Tahir Hussain

Person

Patents Grantslast 30 patents

Temporary bonding structures for die-to-die and wafer-to-wafer bonding

Integrated mechanical aids for high accuracy alignable-electrical c...

Nano vacuum gap device with a gate-all-around cathode

Scalable high-density wireless neuroelectric sensor and stimulator...

Monolithic integration of GaN and InP components

Scalable high-density wireless neuroelectric sensor and stimulator...

Transient antennas and transient electronics

Monolithic integration of GaN and InP components

Memristor devices and fabrication

Test structure to monitor the in-situ channel temperature of field...

Enhancement mode normally-off gallium nitride heterostructure field...

Thermal management for heterogeneously integrated technology

Modulation doped super-lattice base for heterojunction bipolar tran...

Enhancement mode normally-off gallium nitride heterostructure field...

Test structure to monitor the in-situ channel temperature of field...

Carbon-beryllium combinationally doped semiconductor

Method and apparatus for fabricating heterojunction bipolar transis...

Modulation doped super-lattice base for heterojunction bipolar tran...

Ohmic metal contact protection using an encapsulation layer

Modulation doped super-lattice sub-collector for high-performance H...

High power-low noise microwave GaN heterojunction field effect tran...

Bipolar transistors with low parasitic losses

Ohmic metal contact and channel protection in GaN devices using an...

Method and apparatus for fabricating heterojunction bipolar transis...

High power-low noise microwave GaN heterojunction field effect tran...

Bipolar transistors with low parasitic losses

Method and apparatus for allowing formation of self-aligned base co...

GaN DHFET

Ohmic metal contact and channel protection in GaN devices using an...

Ohmic contacts for high electron mobility transistors and a method...

Patents Applicationslast 30 patents

NANO VACUUM GAP DEVICE WITH A GATE-ALL-AROUND CATHODE

OHMIC METAL CONTACT PROTECTION USING AN ENCAPSULATION LAYER

Ohmic metal contact and channel protection in GaN devices using an...

Method and apparatus for allowing formation of self-aligned base co...

GaN DHFET

Ohmic metal contact and channel protection in GaN devices using an...

Ohmic contacts for high electron mobility transistors and a method...

High power-low noise microwave GaN heterojunction field effet trans...

Ion-implantation and shallow etching to produce effective edge term...