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Taira Matsunaga
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Yokohama, JP
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last 30 patents
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Patent Grant
Bi-MOS type semiconductor integrated circuit device having high-fre...
Patent number
5,238,850
Issue date
Aug 24, 1993
Kabushiki Kaisha Toshiba
Taira Matsunaga
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
BiMOS structure having a protective diode
Patent number
5,212,398
Issue date
May 18, 1993
Kabushiki Kaisha Toshiba
Taira Matsunaga
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
MOS type semiconductor device and method for manufacturing the same
Patent number
5,115,290
Issue date
May 19, 1992
Kabushiki Kaisha Toshiba
Kouji Murakami
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Protection diode structure
Patent number
4,928,157
Issue date
May 22, 1990
Kabushiki Kaisha Toshiba
Taira Matsunaga
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Signal-processing circuit having a field-effect MOSFET and bipolar...
Patent number
4,757,276
Issue date
Jul 12, 1988
Kabushiki Kaisha Toshiba
Tetsuo Ishii
H03 - BASIC ELECTRONIC CIRCUITRY