Taishi KUBOTA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming a nitrogen-containing gate insulating film
- Patent number 7,592,234
- Issue date Sep 22, 2009
- Elpida Memory, Inc.
- Takuo Ohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device and oxidization method...
- Patent number 7,163,871
- Issue date Jan 16, 2007
- Elpida Memory, Inc.
- Taishi Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polyacrystalline silicon film formation method
- Patent number 6,300,185
- Issue date Oct 9, 2001
- NEC Corporation
- Taishi Kubota
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nonvolatile semiconductor memory device and manufacturing method of...
- Patent number 5,973,355
- Issue date Oct 26, 1999
- NEC Corporation
- Hiroki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and manufacturing method of...
- Patent number 5,972,750
- Issue date Oct 26, 1999
- NEC Corporation
- Hiroki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically erasable and programmable read only memory cell with s...
- Patent number 5,757,044
- Issue date May 26, 1998
- NEC Corporation
- Taishi Kubota
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory cell and method of manufacturing the same
- Patent number 5,065,215
- Issue date Nov 12, 1991
- NEC Corporation
- Taishi Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making insulated-gate field effect transistor
- Patent number 4,868,137
- Issue date Sep 19, 1989
- NEC Corporation
- Taishi Kubota
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING A NITROGEN-CONTAINING GATE INSULATING FILM
- Publication number 20080032509
- Publication date Feb 7, 2008
- Elpida Memory, Inc.
- Takuo OHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device having a polymetal...
- Publication number 20070099364
- Publication date May 3, 2007
- Takuo Ohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor apparatus and method of producing the same
- Publication number 20060166459
- Publication date Jul 27, 2006
- Elpida Memory, Inc.
- Takuo Ohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing semiconductor device
- Publication number 20050227452
- Publication date Oct 13, 2005
- ELPIDA MEMORY, INC.
- Takuo Ohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing semiconductor device
- Publication number 20050215026
- Publication date Sep 29, 2005
- Elpida Memory, Inc.
- Takuo Ohashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of semiconductor device and oxidization method...
- Publication number 20040214404
- Publication date Oct 28, 2004
- Taishi Kubota
- H01 - BASIC ELECTRIC ELEMENTS

Taishi KUBOTA

Person

Patents Grantslast 30 patents

Method for forming a nitrogen-containing gate insulating film

Manufacturing method of semiconductor device and oxidization method...

Polyacrystalline silicon film formation method

Nonvolatile semiconductor memory device and manufacturing method of...

Nonvolatile semiconductor memory device and manufacturing method of...

Electrically erasable and programmable read only memory cell with s...

Semiconductor memory cell and method of manufacturing the same

Method of making insulated-gate field effect transistor

Patents Applicationslast 30 patents

METHOD FOR FORMING A NITROGEN-CONTAINING GATE INSULATING FILM

Method for manufacturing a semiconductor device having a polymetal...

Semiconductor apparatus and method of producing the same

Method for producing semiconductor device

Method for producing semiconductor device

Manufacturing method of semiconductor device and oxidization method...