Taizo Fujii

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Kyoto, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device comprising a bipolar...
- Patent number 6,800,532
- Issue date Oct 5, 2004
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,642,607
- Issue date Nov 4, 2003
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a particular DMISFET structure
- Patent number 5,905,284
- Issue date May 18, 1999
- Matsushita Electric Industrial Co., Ltd.
- Taizo Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,851,863
- Issue date Dec 22, 1998
- Matsushita Electric Industrial Co., Ltd.
- Taizo Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,817,551
- Issue date Oct 6, 1998
- Matsushita Electric Industrial Co., Ltd.
- Taizo Fujii
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20040018692
- Publication date Jan 29, 2004
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20020135009
- Publication date Sep 26, 2002
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS