Taizo HOSHINO

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Process for producing epitaxial silicon carbide single crystal subs...
- Patent number 9,691,607
- Issue date Jun 27, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial silicon carbide single crystal substrate and process for...
- Patent number 8,901,570
- Issue date Dec 2, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single-crystal substrate and method of producing SiC single-cry...
- Patent number 8,044,408
- Issue date Oct 25, 2011
- Nippon Steel Corporation
- Tatsuo Fujimoto
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...
- Publication number 20150075422
- Publication date Mar 19, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...
- Publication number 20130049014
- Publication date Feb 28, 2013
- NIPPON STEEL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
- Publication number 20130029158
- Publication date Jan 31, 2013
- NIPPON STEEL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial silicon carbide monocrystalline substrate and method of p...
- Publication number 20110278596
- Publication date Nov 17, 2011
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...
- Publication number 20100295059
- Publication date Nov 25, 2010
- NIPPON STEEL CORPORATION
- Tatsuo FUJIMOTO
- C30 - CRYSTAL GROWTH