Takahiro Hakamata

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual metal wrap-around contacts for semiconductor devices
- Patent number 12,284,820
- Issue date Apr 22, 2025
- Tokyo Electron Limited
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,621,190
- Issue date Apr 4, 2023
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal wrap-around contacts for semiconductor devices
- Patent number 11,374,101
- Issue date Jun 28, 2022
- Tokyo Electron Limited
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,024,535
- Issue date Jun 1, 2021
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition with surface treatment
- Patent number 10,378,105
- Issue date Aug 13, 2019
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Resistive random accress memory containing a conformal titanium alu...
- Patent number 10,361,366
- Issue date Jul 23, 2019
- Tokyo Electron Limited
- Takahiro Hakamata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 10,056,328
- Issue date Aug 21, 2018
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 9,711,449
- Issue date Jul 18, 2017
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20220310812
- Publication date Sep 29, 2022
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20210287936
- Publication date Sep 16, 2021
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20200279942
- Publication date Sep 3, 2020
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20200118871
- Publication date Apr 16, 2020
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCRESS MEMORY CONTAINING A CONFORMAL TITANIUM ALU...
- Publication number 20190044064
- Publication date Feb 7, 2019
- TOKYO ELECTRON LIMITED
- Takahiro Hakamata
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE DEPOSITION WITH SURFACE TREATMENT
- Publication number 20170342553
- Publication date Nov 30, 2017
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS
- Publication number 20170317022
- Publication date Nov 2, 2017
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM METAL DEPOSITION METHOD FOR ELECTRICAL CONNECTIONS
- Publication number 20170241014
- Publication date Aug 24, 2017
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS
- Publication number 20160358815
- Publication date Dec 8, 2016
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS

Takahiro Hakamata

Person

Patents Grantslast 30 patents

Dual metal wrap-around contacts for semiconductor devices

Method for filling recessed features in semiconductor devices with...

Dual metal wrap-around contacts for semiconductor devices

Method for filling recessed features in semiconductor devices with...

Selective deposition with surface treatment

Resistive random accress memory containing a conformal titanium alu...

Ruthenium metal feature fill for interconnects

Ruthenium metal feature fill for interconnects

Patents Applicationslast 30 patents

DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

RESISTIVE RANDOM ACCRESS MEMORY CONTAINING A CONFORMAL TITANIUM ALU...

SELECTIVE DEPOSITION WITH SURFACE TREATMENT

RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS

RUTHENIUM METAL DEPOSITION METHOD FOR ELECTRICAL CONNECTIONS

RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS