Takahiro KANDA

Person

Aichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for manufacturing silicon carbide single cryst...
- Patent number 12,281,410
- Issue date Apr 22, 2025
- Central Research Institute Of Electric Power Industry
- Norihiro Hoshino
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...
- Publication number 20250215613
- Publication date Jul 3, 2025
- Central Research Institute of Electric Power Industry
- Norihiro HOSHINO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20240191392
- Publication date Jun 13, 2024
- DENSO CORPORATION
- Akiyoshi HORIAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20240183073
- Publication date Jun 6, 2024
- Denso Corporation
- Soma SAKAKIBARA
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...
- Publication number 20240110308
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20230279580
- Publication date Sep 7, 2023
- DENSO CORPORATION
- Akiyoshi HORIAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...
- Publication number 20220112623
- Publication date Apr 14, 2022
- Central Research Institute of Electric Power Industry
- Norihiro HOSHINO
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER
- Publication number 20210301421
- Publication date Sep 30, 2021
- Denso Corporation
- Masatake NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS

Takahiro KANDA

Person

Patents Grantslast 30 patents

Method and apparatus for manufacturing silicon carbide single cryst...

SiC wafer and manufacturing method for SiC wafer

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...

SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER