Takahisa Ohno

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Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide (SiC) MOSFET with a silicon oxide layer capable of...
- Patent number 10,186,596
- Issue date Jan 22, 2019
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film material, method of film formation using insulating...
- Patent number 8,497,391
- Issue date Jul 30, 2013
- National Institute for Materials Science
- Takahisa Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20170345657
- Publication date Nov 30, 2017
- KABUSHIKI KAISHA TOSHIBA
- Tatsuo SHIMIZU
- B60 - VEHICLES IN GENERAL
Information Patent Application
INSULATING FILM MATERIAL, METHOD FOR FORMING FILM BY USING THE INSU...
- Publication number 20110159212
- Publication date Jun 30, 2011
- National Institute for Materials Science
- Takahisa Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INSULATING FILM MATERIAL, METHOD OF FILM FORMATION USING INSULATING...
- Publication number 20110130584
- Publication date Jun 2, 2011
- Takahisa Ohno
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...