Takahito FUJITA

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,876,096
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,710,740
- Issue date Jul 25, 2023
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable die size memory device and methods of manufacturing the same
- Patent number 11,069,707
- Issue date Jul 20, 2021
- SanDisk Technologies LLC
- Tomoka Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing hydrogen diffusion block...
- Patent number 10,515,897
- Issue date Dec 24, 2019
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing hydrogen diffusion block...
- Patent number 10,515,907
- Issue date Dec 24, 2019
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...
- Publication number 20240063062
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kouta ONOGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230111003
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230112262
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230111724
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE DIE SIZE MEMORY DEVICE AND METHODS OF MANUFACTURING THE SAME
- Publication number 20210126008
- Publication date Apr 29, 2021
- SANDISK TECHNOLOGIES LLC
- Tomoka TANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...
- Publication number 20190355663
- Publication date Nov 21, 2019
- SanDisk Technologies LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...
- Publication number 20190355672
- Publication date Nov 21, 2019
- SanDisk Technologies LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS

Takahito FUJITA

Person

Patents Grantslast 30 patents

Field effect transistors with reduced gate fringe area and method o...

Field effect transistors with reduced gate fringe area and method o...

Variable die size memory device and methods of manufacturing the same

Three-dimensional memory device containing hydrogen diffusion block...

Three-dimensional memory device containing hydrogen diffusion block...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

VARIABLE DIE SIZE MEMORY DEVICE AND METHODS OF MANUFACTURING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...