Takamitsu Kawahara

Person

Kawasaki-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate and method for manufacturing semiconductor...
- Patent number 9,773,678
- Issue date Sep 26, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko Imaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor substrate
- Patent number 9,761,479
- Issue date Sep 12, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko Imaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, semiconductor device and method for manu...
- Patent number 8,890,170
- Issue date Nov 18, 2014
- Hoya Corporation
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon carbide single crystal
- Patent number 8,133,321
- Issue date Mar 13, 2012
- Hoya Corporation
- Takamitsu Kawahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Compound crystal and method of manufacturing same
- Patent number 7,211,337
- Issue date May 1, 2007
- Hoya Corporation
- Hiroyuki Nagasawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing compound single crystal
- Patent number 7,101,774
- Issue date Sep 5, 2006
- Hoya Corporation
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide, silicon carbide, composite...
- Patent number 6,821,340
- Issue date Nov 23, 2004
- Hoya Corporation
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing compound single crystal
- Patent number 6,736,894
- Issue date May 18, 2004
- Hoya Corporation
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound crystal and method of manufacturing same
- Patent number 6,703,288
- Issue date Mar 9, 2004
- Hoya Corporation
- Hiroyuki Nagasawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide and method for producing the same
- Patent number 6,596,080
- Issue date Jul 22, 2003
- Hoya Corporation
- Takamitsu Kawahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide film and method for manufacturing the same
- Patent number 6,475,456
- Issue date Nov 5, 2002
- Hoya Corporation
- Yukitaka Nakano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide film and method for manufacturing the same
- Patent number 6,416,578
- Issue date Jul 9, 2002
- Hoya Corporation
- Yukitaka Nakano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing X-ray mask and X-ray mask blank, and X-ray...
- Patent number 6,317,480
- Issue date Nov 13, 2001
- Hoya Corporation
- Tsutomu Shoki
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
X-ray mask blank, x-ray mask, and pattern transfer method
- Patent number 6,128,363
- Issue date Oct 3, 2000
- Hoya Corporation
- Tsutomu Shoki
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
X-ray mask blank and manufacturing method for the same, and manufac...
- Patent number 5,999,590
- Issue date Dec 7, 1999
- Hoya Corporation
- Tsutomu Shoki
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
X-ray mask blank, X-ray mask and pattern transfer method
- Patent number 5,848,120
- Issue date Dec 8, 1998
- Hoya Corporation
- Tsutomu Shoki
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20170213735
- Publication date Jul 27, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko IMAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE
- Publication number 20160204023
- Publication date Jul 14, 2016
- KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
- Ko IMAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANU...
- Publication number 20130234164
- Publication date Sep 12, 2013
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20130228797
- Publication date Sep 5, 2013
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20110006310
- Publication date Jan 13, 2011
- HOYA CORPORATION
- Hiroyuki Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Producing Silicon Carbide Single Crystal
- Publication number 20080289570
- Publication date Nov 27, 2008
- HOYA CORPORATION
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound crystal and method of manufacturing same
- Publication number 20040127042
- Publication date Jul 1, 2004
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing single crystal substrate
- Publication number 20030056718
- Publication date Mar 27, 2003
- HOYA CORPORATION
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing compound single crystal
- Publication number 20030047129
- Publication date Mar 13, 2003
- HOYA CORPORATION
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing compound single crystal
- Publication number 20030045102
- Publication date Mar 6, 2003
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound crystal and method of manufacturing same
- Publication number 20030040167
- Publication date Feb 27, 2003
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide film and method for manufacturing the same
- Publication number 20020124793
- Publication date Sep 12, 2002
- Hoya Corporation
- Yukitaka Nakano
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing silicon carbide, silicon carbide, composite...
- Publication number 20020072249
- Publication date Jun 13, 2002
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide and method for producing the same
- Publication number 20020014198
- Publication date Feb 7, 2002
- HOYA CORPORATION
- Takamitsu Kawahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Takamitsu Kawahara

Person

Patents Grantslast 30 patents

Semiconductor substrate and method for manufacturing semiconductor...

Manufacturing method for semiconductor substrate

Silicon carbide substrate, semiconductor device and method for manu...

Process for producing silicon carbide single crystal

Compound crystal and method of manufacturing same

Method of manufacturing compound single crystal

Method of manufacturing silicon carbide, silicon carbide, composite...

Method of manufacturing compound single crystal

Compound crystal and method of manufacturing same

Silicon carbide and method for producing the same

Silicon carbide film and method for manufacturing the same

Silicon carbide film and method for manufacturing the same

Method of manufacturing X-ray mask and X-ray mask blank, and X-ray...

X-ray mask blank, x-ray mask, and pattern transfer method

X-ray mask blank and manufacturing method for the same, and manufac...

X-ray mask blank, X-ray mask and pattern transfer method

Patents Applicationslast 30 patents

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANU...

SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Process for Producing Silicon Carbide Single Crystal

Compound crystal and method of manufacturing same

Method of manufacturing single crystal substrate

Method of manufacturing compound single crystal

Method of manufacturing compound single crystal

Compound crystal and method of manufacturing same

Silicon carbide film and method for manufacturing the same

Method of manufacturing silicon carbide, silicon carbide, composite...

Silicon carbide and method for producing the same