Takanao SHIMODAIRA

Person

Nagoya-City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,611,017
- Issue date Mar 21, 2023
- NGK Insulators, Ltd.
- Takayuki Hirao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,555,257
- Issue date Jan 17, 2023
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,309,455
- Issue date Apr 19, 2022
- NGK Insulators, Ltd.
- Takayuki Hirao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,088,299
- Issue date Aug 10, 2021
- NGK Insulators, Ltd.
- Takayuki Hirao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 nitride layer, composite substrate, and functional element
- Patent number 11,035,055
- Issue date Jun 15, 2021
- NGK Insulators, Ltd.
- Yoshinori Isoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,011,678
- Issue date May 18, 2021
- NGK Insulators, Ltd.
- Takayuki Hirao
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
System and method for producing group 13 nitride crystals comprised...
- Patent number 10,138,570
- Issue date Nov 27, 2018
- NGK Insulators, Ltd.
- Takashi Yoshino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal
- Patent number 10,041,186
- Issue date Aug 7, 2018
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for separating group 13 element nitride layer, and composite...
- Patent number 9,960,316
- Issue date May 1, 2018
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 3B nitride crystal substrate
- Patent number 9,677,192
- Issue date Jun 13, 2017
- NGK Insulators, Ltd.
- Takanao Shimodaira
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 13 nitride crystal with stepped surface
- Patent number 9,290,861
- Issue date Mar 22, 2016
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride single crystal manufacturing apparatus
- Patent number 9,017,479
- Issue date Apr 28, 2015
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing a nitride single crystal and apparatus therefor
- Patent number 8,999,059
- Issue date Apr 7, 2015
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing gallium nitride layer and seed crystal substra...
- Patent number 8,795,431
- Issue date Aug 5, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing group 13 nitride crystal and group 13 nitride cr...
- Patent number 8,729,672
- Issue date May 20, 2014
- NGK Insulators, Ltd.
- Takanao Shimodaira
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Melt composition for gallium nitride single crystal growth and meth...
- Patent number 8,657,955
- Issue date Feb 25, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing group 13 nitride crystal and group 13 nitride cr...
- Patent number 8,440,017
- Issue date May 14, 2013
- NGK Insulators, Ltd.
- Takanao Shimodaira
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for producing nitride single crystal
- Patent number 8,231,729
- Issue date Jul 31, 2012
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III nitride-based compound semiconductor...
- Patent number 8,227,324
- Issue date Jul 24, 2012
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing group III nitride based compound...
- Patent number 8,123,856
- Issue date Feb 28, 2012
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Single crystal growing method
- Patent number 7,842,133
- Issue date Nov 30, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20230215969
- Publication date Jul 6, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20220199854
- Publication date Jun 23, 2022
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200232120
- Publication date Jul 23, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200203573
- Publication date Jun 25, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200190695
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200194626
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200194621
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 NITRIDE LAYER, COMPOSITE SUBSTRATE, AND FUNCTIONAL ELEMENT
- Publication number 20190242029
- Publication date Aug 8, 2019
- NGK Insulators, Ltd.
- Yoshinori ISODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Separating Group 13 Element Nitride Layer, and Composite...
- Publication number 20170263810
- Publication date Sep 14, 2017
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Apparatus for Producing Group-13-Element Nitride Crystals
- Publication number 20170260644
- Publication date Sep 14, 2017
- NGK Insulators, Ltd.
- Takashi Yoshino
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Nitride Crystal
- Publication number 20160355945
- Publication date Dec 8, 2016
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...
- Publication number 20140026809
- Publication date Jan 30, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Gallium Nitride Layer and Seed Crystal Substra...
- Publication number 20140014028
- Publication date Jan 16, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...
- Publication number 20130221490
- Publication date Aug 29, 2013
- NGK Insulators, Ltd.
- Takanao SHIMODAIRA
- C30 - CRYSTAL GROWTH
Information Patent Application
BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTUR...
- Publication number 20120175740
- Publication date Jul 12, 2012
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL
- Publication number 20120111264
- Publication date May 10, 2012
- Takanao Shimodaira
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...
- Publication number 20120012984
- Publication date Jan 19, 2012
- NGK Insulators, Ltd.
- Takanao SHIMODAIRA
- C30 - CRYSTAL GROWTH
Information Patent Application
Group 3B nitride crystal substrate
- Publication number 20110274609
- Publication date Nov 10, 2011
- NGK Insulators, Ltd.
- Takanao Shimodaira
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR...
- Publication number 20100093157
- Publication date Apr 15, 2010
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Melt composition for gallium nitride single crystal growth and meth...
- Publication number 20090293805
- Publication date Dec 3, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Apparatus for Producing Group III Nitride Based Compound...
- Publication number 20090173273
- Publication date Jul 9, 2009
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for Producing Group III Nitride Based Compound Semiconductor
- Publication number 20090169444
- Publication date Jul 2, 2009
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR
- Publication number 20090078193
- Publication date Mar 26, 2009
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL
- Publication number 20090000542
- Publication date Jan 1, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL GROWING METHOD
- Publication number 20090000538
- Publication date Jan 1, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS
- Publication number 20080282971
- Publication date Nov 20, 2008
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Enhanced porous ceramic article and method of manufacturing the same
- Publication number 20050196586
- Publication date Sep 8, 2005
- NGK Insulators, Ltd.
- Takanao Shimodaira
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL

Takanao SHIMODAIRA

Person

Patents Grantslast 30 patents

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 nitride layer, composite substrate, and functional element

Group 13 element nitride layer, free-standing substrate and functio...

System and method for producing group 13 nitride crystals comprised...

Method for producing nitride crystal

Method for separating group 13 element nitride layer, and composite...

Group 3B nitride crystal substrate

Group 13 nitride crystal with stepped surface

Nitride single crystal manufacturing apparatus

Process for producing a nitride single crystal and apparatus therefor

Method for producing gallium nitride layer and seed crystal substra...

Method for growing group 13 nitride crystal and group 13 nitride cr...

Melt composition for gallium nitride single crystal growth and meth...

Method for growing group 13 nitride crystal and group 13 nitride cr...

Apparatus for producing nitride single crystal

Method for producing group III nitride-based compound semiconductor...

Method and apparatus for producing group III nitride based compound...

Single crystal growing method

Patents Applicationslast 30 patents

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 NITRIDE LAYER, COMPOSITE SUBSTRATE, AND FUNCTIONAL ELEMENT

Method for Separating Group 13 Element Nitride Layer, and Composite...

Method and Apparatus for Producing Group-13-Element Nitride Crystals

Method for Producing Nitride Crystal

Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...

Method for Producing Gallium Nitride Layer and Seed Crystal Substra...

METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...

BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTUR...

METHOD FOR PRODUCING GROUP III METAL NITRIDE SINGLE CRYSTAL

METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...

Group 3B nitride crystal substrate

METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR...

Melt composition for gallium nitride single crystal growth and meth...

Method and Apparatus for Producing Group III Nitride Based Compound...

Apparatus for Producing Group III Nitride Based Compound Semiconductor

PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR

APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL

SINGLE CRYSTAL GROWING METHOD

NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS

Enhanced porous ceramic article and method of manufacturing the same