Takao IBI

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Oita-ken, JP

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Patents Grantslast 30 patents

Information Patent Grant
Lateral power MOSFET device having a liner layer formed along the c...
- Patent number 8,471,334
- Issue date Jun 25, 2013
- Kabushiki Kaisha Toshiba
- Takao Ibi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode with controlled breakdown
- Patent number 5,955,766
- Issue date Sep 21, 1999
- Kabushiki Kaisha Toshiba
- Takao Ibi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120061756
- Publication date Mar 15, 2012
- Kabushiki Kaisha Toshiba
- Takao IBI
- H01 - BASIC ELECTRIC ELEMENTS