Takao Miyazaki

Person

Hachioji, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a bipolar transistor
- Patent number 5,061,645
- Issue date Oct 29, 1991
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making polysilicon contacts to IC mesas
- Patent number 5,019,523
- Issue date May 28, 1991
- Hitachi, Ltd.
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilon contacts to IC mesas
- Patent number 4,933,737
- Issue date Jun 12, 1990
- Hitachi, Ltd.
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,860,086
- Issue date Aug 22, 1989
- Hitachi, Ltd.
- Tohru Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron gas hole gas tunneling transistor device
- Patent number 4,835,581
- Issue date May 30, 1989
- Hitachi, Ltd.
- Takao Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with sidewall bare contact structure
- Patent number 4,825,281
- Issue date Apr 25, 1989
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a PN junction formed on an insulator film
- Patent number 4,819,055
- Issue date Apr 4, 1989
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 4,814,838
- Issue date Mar 21, 1989
- Hitachi, Ltd.
- Takao Kuroda
- H01 - BASIC ELECTRIC ELEMENTS

Takao Miyazaki

Person

Patents Grantslast 30 patents

Method of manufacturing a bipolar transistor

Process for making polysilicon contacts to IC mesas

Polysilon contacts to IC mesas

Semiconductor device

Electron gas hole gas tunneling transistor device

Bipolar transistor with sidewall bare contact structure

Semiconductor device having a PN junction formed on an insulator film

Semiconductor device and method of manufacturing the same