Takao Sawada

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 8,679,952
- Issue date Mar 25, 2014
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 7,820,534
- Issue date Oct 26, 2010
- Mitsubishi Electric Corporation
- Takao Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material for converting ultraviolet ray and display device using th...
- Patent number 6,583,561
- Issue date Jun 24, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Takao Sawada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR,...
- Publication number 20130126906
- Publication date May 23, 2013
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20110000434
- Publication date Jan 6, 2011
- MITSUBISHI ELECTRIC CORPORATION
- Takao SAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20090042375
- Publication date Feb 12, 2009
- MITSUBISHI ELECTRIC CORPORATION
- Takao Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing fluctuation in cut-off voltage, cathode for elec...
- Publication number 20050231093
- Publication date Oct 20, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Takao Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Material for converting ultraviolet ray and display device using th...
- Publication number 20010050528
- Publication date Dec 13, 2001
- Takao Sawada
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...