Takashi Ichimori

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Instruction beam detection apparatus and method of detecting instru...
- Patent number 9,407,305
- Issue date Aug 2, 2016
- Lapis Semiconductor Co., Ltd.
- Takashi Ichimori
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor device having silicide layer completely occupied amor...
- Patent number 8,183,643
- Issue date May 22, 2012
- Oki Semiconductor Co., Ltd.
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a field effect transistor having metallic silicide and...
- Patent number 7,479,682
- Issue date Jan 20, 2009
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell structure and semiconductor memory device
- Patent number 7,405,439
- Issue date Jul 29, 2008
- Oki Electric Industry Co., Ltd.
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of a field effect transistor having metallic silicide and...
- Patent number 7,244,996
- Issue date Jul 17, 2007
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,861,322
- Issue date Mar 1, 2005
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOS field effect transistor and manufacturing method therefor
- Patent number 6,750,088
- Issue date Jun 15, 2004
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOS field effect transistor and manufacturing method therefor
- Patent number 6,531,743
- Issue date Mar 11, 2003
- Oki Electric Industry Co., Ltd.
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device having a metallic sil...
- Patent number 6,274,470
- Issue date Aug 14, 2001
- Oki Electric Industry Co., Ltd.
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INSTRUCTION BEAM DETECTION APPARATUS AND METHOD OF DETECTING INSTRU...
- Publication number 20130049927
- Publication date Feb 28, 2013
- Takashi Ichimori
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Semiconductor device having low parasitic resistance and small junc...
- Publication number 20110223724
- Publication date Sep 15, 2011
- Oki Semiconductor Co., Ltd.
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of a field effect transistor having metallic silicide and...
- Publication number 20070158757
- Publication date Jul 12, 2007
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE
- Publication number 20060244031
- Publication date Nov 2, 2006
- Oki Electric Industry Co., Ltd.
- Takashi ICHIMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having low parasitic resistance and small junc...
- Publication number 20060145271
- Publication date Jul 6, 2006
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric memory and method of manufacturing same
- Publication number 20060054949
- Publication date Mar 16, 2006
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectrics device and method of manufacturing the same
- Publication number 20040238862
- Publication date Dec 2, 2004
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI MOS field effect transistor and manufacturing method therefor
- Publication number 20030151094
- Publication date Aug 14, 2003
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device
- Publication number 20020182784
- Publication date Dec 5, 2002
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having low parasitic resistance and small junc...
- Publication number 20020036320
- Publication date Mar 28, 2002
- Takashi Ichimori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure of a field effect transistor having metallic silicide and...
- Publication number 20010028087
- Publication date Oct 11, 2001
- Norio Hirashita
- H01 - BASIC ELECTRIC ELEMENTS

Takashi Ichimori

Person

Patents Grantslast 30 patents

Instruction beam detection apparatus and method of detecting instru...

Semiconductor device having silicide layer completely occupied amor...

Structure of a field effect transistor having metallic silicide and...

Memory cell structure and semiconductor memory device

Structure of a field effect transistor having metallic silicide and...

Method of manufacturing a semiconductor device

SOI MOS field effect transistor and manufacturing method therefor

SOI MOS field effect transistor and manufacturing method therefor

Method for fabricating a semiconductor device having a metallic sil...

Patents Applicationslast 30 patents

INSTRUCTION BEAM DETECTION APPARATUS AND METHOD OF DETECTING INSTRU...

Semiconductor device having low parasitic resistance and small junc...

Structure of a field effect transistor having metallic silicide and...

MEMORY CELL STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE

Semiconductor device having low parasitic resistance and small junc...

Ferroelectric memory and method of manufacturing same

Ferroelectrics device and method of manufacturing the same

SOI MOS field effect transistor and manufacturing method therefor

Method of manufacturing a semiconductor device

Semiconductor device having low parasitic resistance and small junc...

Structure of a field effect transistor having metallic silicide and...