Takashi Katsuno

Person

Nisshin-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Electron emission device and transistor provided with the same
- Patent number 9,779,906
- Issue date Oct 3, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Tsuyoshi Ishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 8,470,672
- Issue date Jun 25, 2013
- Denso Corporation
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 8,440,524
- Issue date May 14, 2013
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu Fujiwara
- C21 - METALLURGY OF IRON
Information Patent Grant
SiC semiconductor device having Schottky barrier diode and method f...
- Patent number 8,436,365
- Issue date May 7, 2013
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with Schottky barrier diode an...
- Patent number 8,324,704
- Issue date Dec 4, 2012
- Denso Corporation
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device making method
- Patent number 8,168,485
- Issue date May 1, 2012
- Denso Corporation
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming impurity regions in silicon carbide devices
- Patent number 8,163,637
- Issue date Apr 24, 2012
- Toyota Jidosha Kabushiki Kaisha
- Masaki Konishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of a semiconductor device
- Patent number 7,855,131
- Issue date Dec 21, 2010
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE
- Publication number 20170263864
- Publication date Sep 14, 2017
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Yumi SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON EMISSION DEVICE AND TRANSISTOR PROVIDED WITH THE SAME
- Publication number 20170243712
- Publication date Aug 24, 2017
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Tsuyoshi ISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120052642
- Publication date Mar 1, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Takeshi ENDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE AND METHOD F...
- Publication number 20110204383
- Publication date Aug 25, 2011
- DENSO CORPORATION
- Takeo YAMAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURIING METHOD
- Publication number 20110207321
- Publication date Aug 25, 2011
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu FUJIWARA
- C21 - METALLURGY OF IRON
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20110151654
- Publication date Jun 23, 2011
- Toyota Jidosha Kabushiki Kaisha
- Masaki KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device with schottky barrier diode an...
- Publication number 20100244049
- Publication date Sep 30, 2010
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of making the same
- Publication number 20100032730
- Publication date Feb 11, 2010
- DENSO CORPORATION
- Takeshi Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method of a semiconductor device
- Publication number 20090269908
- Publication date Oct 29, 2009
- Toyota Jidosha Kabushiki Kaisha
- Hirokazu Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode having Schottky junction and PN junction and method for manuf...
- Publication number 20090230405
- Publication date Sep 17, 2009
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode
- Publication number 20090224353
- Publication date Sep 10, 2009
- DENSO CORPORATION
- Takeo Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS

Takashi Katsuno

Person

Patents Grantslast 30 patents

Electron emission device and transistor provided with the same

Method of manufacturing silicon carbide semiconductor device

Semiconductor device manufacturing method

SiC semiconductor device having Schottky barrier diode and method f...

Silicon carbide semiconductor device with Schottky barrier diode an...

Semiconductor device making method

Forming impurity regions in silicon carbide devices

Manufacturing method of a semiconductor device

Patents Applicationslast 30 patents

ELECTRONIC DEVICE

ELECTRON EMISSION DEVICE AND TRANSISTOR PROVIDED WITH THE SAME

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SIC SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER DIODE AND METHOD F...

SEMICONDUCTOR DEVICE MANUFACTURIING METHOD

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Silicon carbide semiconductor device with schottky barrier diode an...

Semiconductor device and method of making the same

Manufacturing method of a semiconductor device

Diode having Schottky junction and PN junction and method for manuf...

Diode