Takashi Morie

Person

Zama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with hot carriers transmitted to floating gate...
- Patent number 5,111,430
- Issue date May 5, 1992
- Nippon Telegraph & Telephone Corporation
- Takashi Morie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dynamic ram cell with trench surrounded switching element
- Patent number 4,786,954
- Issue date Nov 22, 1988
- Nippon Telegraph & Telephone Public Corporation
- Takashi Morie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET and method of manufacturing the same
- Patent number 4,786,953
- Issue date Nov 22, 1988
- Nippon Telegraph & Telephone
- Takashi Morie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a vertical MOSFET with single surface elect...
- Patent number 4,683,643
- Issue date Aug 4, 1987
- Nippon Telegraph & Telephone Corporation
- Shigeru Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with trench surrounding each memory cell
- Patent number 4,672,410
- Issue date Jun 9, 1987
- Nippon Telegraph & Telephone
- Kenji Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with MIS capacitor
- Patent number 4,645,564
- Issue date Feb 24, 1987
- Nippon Telegraph & Telephone Public Corporation
- Takashi Morie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-only memory and method of manufacturing the same
- Patent number 4,630,237
- Issue date Dec 16, 1986
- Nippon Telegraph & Telephone
- Kenji Miura
- H01 - BASIC ELECTRIC ELEMENTS

Takashi Morie

Person

Patents Grantslast 30 patents

Non-volatile memory with hot carriers transmitted to floating gate...

Dynamic ram cell with trench surrounded switching element

Vertical MOSFET and method of manufacturing the same

Method of manufacturing a vertical MOSFET with single surface elect...

Semiconductor memory device with trench surrounding each memory cell

Method of manufacturing semiconductor device with MIS capacitor

Read-only memory and method of manufacturing the same