Takashi Sakurada

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
- Patent number 11,955,251
- Issue date Apr 9, 2024
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Crystal and substrate of conductive GaAs, and method for forming th...
- Patent number 11,017,913
- Issue date May 25, 2021
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth container
- Patent number 10,533,265
- Issue date Jan 14, 2020
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing semiconductor single crystal
- Patent number 9,797,068
- Issue date Oct 24, 2017
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing semiconductor crystal, and semic...
- Patent number 9,187,843
- Issue date Nov 17, 2015
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing nitride substrate, and nitride substrate
- Patent number 8,829,658
- Issue date Sep 9, 2014
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor single-crystal manufacturing device and manu...
- Patent number 8,591,653
- Issue date Nov 26, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and method of its manufacture
- Patent number 8,476,086
- Issue date Jul 2, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor device and epitaxial substrate
- Patent number 8,410,524
- Issue date Apr 2, 2013
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film of aluminum nitride and process for producing the thin fi...
- Patent number 8,367,577
- Issue date Feb 5, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single...
- Patent number 8,363,326
- Issue date Jan 29, 2013
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- G02 - OPTICS
Information Patent Grant
GaN single-crystal mass and method of its manufacture, and semicond...
- Patent number 8,294,245
- Issue date Oct 23, 2012
- Sumitomo Electric Industries, Ltd.
- Hideaki Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing gallium nitride crystal and gallium nitrid...
- Patent number 8,147,612
- Issue date Apr 3, 2012
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Grant
High electron mobility transistor, field-effect transistor, and epi...
- Patent number 7,884,393
- Issue date Feb 8, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical gallium nitride semiconductor device and epitaxial substrate
- Patent number 7,872,285
- Issue date Jan 18, 2011
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor device and epitaxial substrate
- Patent number 7,763,892
- Issue date Jul 27, 2010
- Sumitomo Electric Industries, Ltd.
- Kouhei Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III Nitride Transistor
- Patent number 7,749,828
- Issue date Jul 6, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting apparatus
- Patent number 7,687,822
- Issue date Mar 30, 2010
- Sumitomo Electric Industries, Ltd.
- Youichi Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light supply unit, illumination unit, and illumination system
- Patent number 7,628,523
- Issue date Dec 8, 2009
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Epitaxial substrate and semiconductor element
- Patent number 7,531,889
- Issue date May 12, 2009
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light supply unit, illumination unit, and illumination system
- Patent number 7,360,934
- Issue date Apr 22, 2008
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Light emitting apparatus
- Patent number 7,202,509
- Issue date Apr 10, 2007
- Sumitomo Electric Industries, Ltd.
- Youichi Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device
- Patent number 7,190,004
- Issue date Mar 13, 2007
- Sumitomo Electric Industries, Ltd.
- Youichi Nagai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20230059737
- Publication date Feb 23, 2023
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
- Publication number 20210241934
- Publication date Aug 5, 2021
- Sumitomo Electric Industries, Ltd.
- Takashi SAKURADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
- Publication number 20180261354
- Publication date Sep 13, 2018
- Sumitomo Electric Industries, Ltd.
- Takashi SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH CONTAINER
- Publication number 20180010262
- Publication date Jan 11, 2018
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20160083865
- Publication date Mar 24, 2016
- Sumitomo Electric Industries, Ltd.
- Takashi SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
- Publication number 20140357067
- Publication date Dec 4, 2014
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Satoshi ARAKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Device
- Publication number 20130341633
- Publication date Dec 26, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
- Publication number 20130312878
- Publication date Nov 28, 2013
- Sumitomo Electric Industries, Ltd.
- Takashi SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL
- Publication number 20130008370
- Publication date Jan 10, 2013
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...
- Publication number 20120164058
- Publication date Jun 28, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Tomoki UEMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMIC...
- Publication number 20120112135
- Publication date May 10, 2012
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...
- Publication number 20110274879
- Publication date Nov 10, 2011
- Sumitomo Electric Industries. Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE
- Publication number 20110156213
- Publication date Jun 30, 2011
- Sumitomo Electric Industries Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRID...
- Publication number 20110110840
- Publication date May 12, 2011
- Sumitomo Electric Industries, Ltd.
- Michimasa Miyanaga
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...
- Publication number 20110109973
- Publication date May 12, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...
- Publication number 20110104438
- Publication date May 5, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body
- Publication number 20110076453
- Publication date Mar 31, 2011
- Sumitomo Electric Industries, Ltd.
- Satoshi Arakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Compound Semiconductor Single-Crystal Manufacturing Device and Manu...
- Publication number 20100319614
- Publication date Dec 23, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Single-Crystal Mass and Method of Its Manufacture, and Semicond...
- Publication number 20100314625
- Publication date Dec 16, 2010
- Sumitomo Electric Industries, Ltd.
- Hideaki NAKAHATA
- C30 - CRYSTAL GROWTH
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, and Epi...
- Publication number 20100230723
- Publication date Sep 16, 2010
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin Film of Aluminum Nitride and Process for Producing the Thin Fi...
- Publication number 20100209622
- Publication date Aug 19, 2010
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20090194796
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...
- Publication number 20090194848
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20090189186
- Publication date Jul 30, 2009
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...
- Publication number 20090189190
- Publication date Jul 30, 2009
- Sumitomo Electric Industries, Ltd.
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20080315209
- Publication date Dec 25, 2008
- Sumitomo Electric Industries, Ltd.
- Kouhei Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Semiconductor Device and Epitaxial Substrate
- Publication number 20080265258
- Publication date Oct 30, 2008
- Sumitomo Electric Industries, Ltd.
- Tatsuya Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light supply unit, illumination unit, and illumination system
- Publication number 20080225550
- Publication date Sep 18, 2008
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- B60 - VEHICLES IN GENERAL
Information Patent Application
Light emitting apparatus
- Publication number 20080210959
- Publication date Sep 4, 2008
- Sumitomo Electric Industries, Ltd.
- Youichi Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of its manufacture
- Publication number 20080128706
- Publication date Jun 5, 2008
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH

Takashi Sakurada

Person

Patents Grantslast 30 patents

Crystal and substrate of conductive GaAs, and method for forming th...

Crystal and substrate of conductive GaAs, and method for forming th...

Growth container

Method of producing semiconductor single crystal

Method and apparatus for producing semiconductor crystal, and semic...

Method of manufacturing nitride substrate, and nitride substrate

Compound semiconductor single-crystal manufacturing device and manu...

Semiconductor device and method of its manufacture

Group III nitride semiconductor device and epitaxial substrate

Thin film of aluminum nitride and process for producing the thin fi...

AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single...

GaN single-crystal mass and method of its manufacture, and semicond...

Method for manufacturing gallium nitride crystal and gallium nitrid...

High electron mobility transistor, field-effect transistor, and epi...

Vertical gallium nitride semiconductor device and epitaxial substrate

Group III nitride semiconductor device and epitaxial substrate

Method of manufacturing group III Nitride Transistor

Light emitting apparatus

Light supply unit, illumination unit, and illumination system

Epitaxial substrate and semiconductor element

Light supply unit, illumination unit, and illumination system

Light emitting apparatus

Light emitting device

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...

CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...

GROWTH CONTAINER

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE

Semiconductor Device

CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...

METHOD OF PRODUCING SEMICONDUCTOR SINGLE CRYSTAL

METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...

METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMIC...

CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING TH...

METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE

METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRID...

AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...

AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE...

AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body

Compound Semiconductor Single-Crystal Manufacturing Device and Manu...

GaN Single-Crystal Mass and Method of Its Manufacture, and Semicond...

High Electron Mobility Transistor, Field-Effect Transistor, and Epi...

Thin Film of Aluminum Nitride and Process for Producing the Thin Fi...

Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate

METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...

Group III Nitride Semiconductor Device and Epitaxial Substrate

High Electron Mobility Transistor, Field-Effect Transistor, Epitaxi...

Group III Nitride Semiconductor Device and Epitaxial Substrate

Group III Nitride Semiconductor Device and Epitaxial Substrate

Light supply unit, illumination unit, and illumination system

Light emitting apparatus

Semiconductor device and method of its manufacture