Takashi Tokuyama

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Higashikurume, JP

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Patents Grantslast 30 patents

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Method of making three dimensional semiconductor devices in selecti...
- Patent number 4,609,407
- Issue date Sep 2, 1986
- Hitachi, Ltd.
- Tamura Masao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device with thin film monocrystalli...
- Patent number 4,570,175
- Issue date Feb 11, 1986
- Hitachi, Ltd.
- Masanobu Miyao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing single crystal film utilizing a two-step heat t...
- Patent number 4,565,584
- Issue date Jan 21, 1986
- Hitachi, Ltd.
- Masao Tamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-mass-analyzed ion implantation
- Patent number 4,533,831
- Issue date Aug 6, 1985
- Hitachi, Ltd.
- Haruo Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing single-crystal film
- Patent number 4,498,951
- Issue date Feb 12, 1985
- Hitachi, Ltd.
- Masao Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked polycrystalline silicon film of high and low conductivity l...
- Patent number 4,394,191
- Issue date Jul 19, 1983
- Hitachi, Ltd.
- Yasuo Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 4,351,674
- Issue date Sep 28, 1982
- Hitachi, Ltd.
- Isao Yoshida
- H01 - BASIC ELECTRIC ELEMENTS