Takashi Yokoyama

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Sapporo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming polycrystalline silicon layer on semiconductor wafer
- Patent number 5,167,758
- Issue date Dec 1, 1992
- Hoxan Corporation
- Yasuhiro Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline silicon wafer tray
- Patent number 4,820,145
- Issue date Apr 11, 1989
- Hoxan Corporation
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating polycrystalline silicon wafer
- Patent number 4,561,486
- Issue date Dec 31, 1985
- Hoxan Corporation
- Yasuhiro Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for fabricating polycrystalline silicon wafer
- Patent number 4,519,764
- Issue date May 28, 1985
- Hoxan Corporation
- Yasuhiro Maeda
- C30 - CRYSTAL GROWTH