Takashi Yokoyama

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing single crystal SiC substrate and single crysta...
- Patent number 8,906,786
- Issue date Dec 9, 2014
- Air Water Inc.
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing single crystal SiC substrate and single crysta...
- Patent number 8,603,901
- Issue date Dec 10, 2013
- Air Water Inc.
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitrogen compound semiconductor substrate...
- Patent number 8,563,442
- Issue date Oct 22, 2013
- Air Water Inc.
- Keisuke Kawamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film forming apparatus
- Patent number 7,691,203
- Issue date Apr 6, 2010
- Air Water Inc.
- Toru Inagaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for producing a wafer
- Patent number 6,284,661
- Issue date Sep 4, 2001
- Daido Hoxan Inc.
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing a wafer
- Patent number 5,972,795
- Issue date Oct 26, 1999
- Daido Hoxan Inc.
- Takashi Yokoyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for processing semiconductor material
- Patent number 5,912,186
- Issue date Jun 15, 1999
- Daido Hoxan, Inc.
- Akira Yoshino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making porous fluoroplastics membrane for an air depolar...
- Patent number 5,370,836
- Issue date Dec 6, 1994
- Matsushita Electric Industrial Co., Ltd.
- Takashi Yokoyama
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Battery pack and its packaging method
- Patent number 5,242,763
- Issue date Sep 7, 1993
- Matsushita Electric Industrial Co. Ltd.
- Hajime Konishi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTA...
- Publication number 20140051235
- Publication date Feb 20, 2014
- AIR WATER INC
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE...
- Publication number 20110089433
- Publication date Apr 21, 2011
- Keisuke Kawamura
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTA...
- Publication number 20100252837
- Publication date Oct 7, 2010
- Katsutoshi Izumi
- C30 - CRYSTAL GROWTH
Information Patent Application
Film forming apparatus
- Publication number 20070175394
- Publication date Aug 2, 2007
- Toru Inagaki
- C30 - CRYSTAL GROWTH

Takashi Yokoyama

Person

Patents Grantslast 30 patents

Method for producing single crystal SiC substrate and single crysta...

Method for producing single crystal SiC substrate and single crysta...

Method for manufacturing nitrogen compound semiconductor substrate...

Film forming apparatus

Method and apparatus for producing a wafer

Method and apparatus for producing a wafer

Method for processing semiconductor material

Process of making porous fluoroplastics membrane for an air depolar...

Battery pack and its packaging method

Patents Applicationslast 30 patents

METHOD FOR PRODUCING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTA...

METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE...

METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTA...

Film forming apparatus