Takasuke Hashimoto

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having the effect that the drop in the current...
- Patent number 6,680,234
- Issue date Jan 20, 2004
- NEC Electronics Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having the effect that the drop in the current...
- Patent number 6,570,241
- Issue date May 27, 2003
- NEC Electronics Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with no parasitic barrier
- Patent number 6,337,251
- Issue date Jan 8, 2002
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an insulation film having emitter contact...
- Patent number 6,087,675
- Issue date Jul 11, 2000
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor on a semiconductor-on-insulator substrate
- Patent number 6,028,344
- Issue date Feb 22, 2000
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating semiconductor device having gettering site l...
- Patent number 6,001,711
- Issue date Dec 14, 1999
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon resistor and method of producing same
- Patent number 5,856,702
- Issue date Jan 5, 1999
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction type bipolar transistor
- Patent number 5,557,118
- Issue date Sep 17, 1996
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having enhanced high speed operation through red...
- Patent number 5,523,614
- Issue date Jun 4, 1996
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an improved low resistive contact
- Patent number 5,475,257
- Issue date Dec 12, 1995
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,438,014
- Issue date Aug 1, 1995
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having the effect that the drop in the current...
- Publication number 20030001235
- Publication date Jan 2, 2003
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having the effect that the drop in the current...
- Publication number 20010052634
- Publication date Dec 20, 2001
- NEC Corporation
- Takasuke Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS

Takasuke Hashimoto

Person

Patents Grantslast 30 patents

Semiconductor device having the effect that the drop in the current...

Semiconductor device having the effect that the drop in the current...

Method of manufacturing semiconductor device with no parasitic barrier

Semiconductor device with an insulation film having emitter contact...

Bipolar transistor on a semiconductor-on-insulator substrate

Process of fabricating semiconductor device having gettering site l...

Polysilicon resistor and method of producing same

Hetero-junction type bipolar transistor

Bipolar transistor having enhanced high speed operation through red...

Semiconductor device having an improved low resistive contact

Method of manufacturing semiconductor device

Patents Applicationslast 30 patents

Semiconductor device having the effect that the drop in the current...

Semiconductor device having the effect that the drop in the current...