Takatomo Sasaki

Person

Minoh-City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride single crystal manufacturing apparatus
- Patent number 9,017,479
- Issue date Apr 28, 2015
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process for producing a nitride single crystal and apparatus therefor
- Patent number 8,999,059
- Issue date Apr 7, 2015
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Melt composition for gallium nitride single crystal growth and meth...
- Patent number 8,657,955
- Issue date Feb 25, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III element nitride crystal producing method and group-III el...
- Patent number 8,574,361
- Issue date Nov 5, 2013
- Ricoh Company, Ltd.
- Osamu Yamada
- G02 - OPTICS
Information Patent Grant
Method for manufacturing nitride single crystal
- Patent number 8,506,705
- Issue date Aug 13, 2013
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing single crystal
- Patent number 8,486,190
- Issue date Jul 16, 2013
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride-based compound semiconductor
- Patent number 8,361,222
- Issue date Jan 29, 2013
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-emitting apparatus, phosphorescent portion, and method of pro...
- Patent number 8,287,760
- Issue date Oct 16, 2012
- Sharp Kabushiki Kaisha
- Masaya Ishida
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Apparatus for producing nitride single crystal
- Patent number 8,231,729
- Issue date Jul 31, 2012
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III nitride-based compound semiconductor...
- Patent number 8,227,324
- Issue date Jul 24, 2012
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a semiconductor crystal
- Patent number 8,216,365
- Issue date Jul 10, 2012
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN crystal producing method, GaN crystal, GaN crystal substrate, s...
- Patent number 8,187,507
- Issue date May 29, 2012
- Osaka University
- Yusuke Mori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for producing group III nitride based compound...
- Patent number 8,123,856
- Issue date Feb 28, 2012
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor substrate, electronic device, optical device, and pro...
- Patent number 8,084,281
- Issue date Dec 27, 2011
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for analyzing sample in liquid
- Patent number 8,037,739
- Issue date Oct 18, 2011
- Shimadzu Corporation
- Masahiro Ota
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group III-nitride crystal, manufacturing method thereof, group III-...
- Patent number 8,038,794
- Issue date Oct 18, 2011
- Sumitomo Electric Industries, Ltd.
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing single crystal of nitride
- Patent number 8,025,728
- Issue date Sep 27, 2011
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group-III-element nitride single crystals and...
- Patent number 7,959,729
- Issue date Jun 14, 2011
- Osaka University
- Takatomo Sasaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Optical wavelength conversion element having a cesium-lithium-borat...
- Patent number 7,948,673
- Issue date May 24, 2011
- Osaka University
- Masashi Yoshimura
- G02 - OPTICS
Information Patent Grant
Group III-nitride semiconductor crystal and manufacturing method th...
- Patent number 7,905,958
- Issue date Mar 15, 2011
- Sumitomo Electric Industries, Ltd.
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growing method
- Patent number 7,842,133
- Issue date Nov 30, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process and apparatus for producing nitride single crystal
- Patent number 7,833,347
- Issue date Nov 16, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing hexagonal boron nitride single crystal and hex...
- Patent number 7,815,733
- Issue date Oct 19, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing III group element nitride crystal, production...
- Patent number 7,794,539
- Issue date Sep 14, 2010
- Panasonic Corporation
- Hisashi Minemoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for production of crystal of group III element nitride an...
- Patent number 7,754,012
- Issue date Jul 13, 2010
- Panasonic Corporation
- Hisashi Minemoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for preparing borate-based crystal and laser oscillation app...
- Patent number 7,744,696
- Issue date Jun 29, 2010
- Japan Science and Technology Agency
- Takatomo Sasaki
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Crystal growing apparatus
- Patent number 7,708,833
- Issue date May 4, 2010
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Light-emitting apparatus, phosphor and method of producing it
- Patent number 7,700,001
- Issue date Apr 20, 2010
- Sharp Kabushiki Kaisha
- Masaya Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III element nitride single crystal and g...
- Patent number 7,507,292
- Issue date Mar 24, 2009
- Osaka Industrial Promotion Organization
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductor crystal
- Patent number 7,459,023
- Issue date Dec 2, 2008
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III EL...
- Publication number 20120168695
- Publication date Jul 5, 2012
- PANASONIC CORPORATION
- Osamu Yamada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ANALYZING SAMPLE IN LIQUID
- Publication number 20110048115
- Publication date Mar 3, 2011
- Shimadzu Corporation
- MASAHIRO OTA
- G02 - OPTICS
Information Patent Application
GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III EL...
- Publication number 20110012070
- Publication date Jan 20, 2011
- PANASONIC CORPORATION
- Osamu Yamada
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Substrate, Electronic Device, Optical Device, and Pro...
- Publication number 20100301358
- Publication date Dec 2, 2010
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR...
- Publication number 20100093157
- Publication date Apr 15, 2010
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-...
- Publication number 20100078606
- Publication date Apr 1, 2010
- PANASONIC CORPORATION
- Osamu Yamada
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, S...
- Publication number 20100059717
- Publication date Mar 11, 2010
- OSAKA UNIVERSITY
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL
- Publication number 20100012020
- Publication date Jan 21, 2010
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C30 - CRYSTAL GROWTH
Information Patent Application
Melt composition for gallium nitride single crystal growth and meth...
- Publication number 20090293805
- Publication date Dec 3, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARB...
- Publication number 20090205561
- Publication date Aug 20, 2009
- OSAKA UNIVERSITY
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Apparatus for Producing Group III Nitride Based Compound...
- Publication number 20090173273
- Publication date Jul 9, 2009
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for Producing Group III Nitride Based Compound Semiconductor
- Publication number 20090169444
- Publication date Jul 2, 2009
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Production Methods of Semiconductor Crystal and Semiconductor Subst...
- Publication number 20090155580
- Publication date Jun 18, 2009
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing single crystal of nitride
- Publication number 20090095212
- Publication date Apr 16, 2009
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR
- Publication number 20090078193
- Publication date Mar 26, 2009
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
WAVELENGTH CONVERSION OPTICAL ELEMENT, METHOD FOR FABRICATING WAVEL...
- Publication number 20090080475
- Publication date Mar 26, 2009
- Osaka University
- Masashi YOSHIMURA
- G02 - OPTICS
Information Patent Application
PROCESS FOR PRODUCING SINGLE CRYSTAL
- Publication number 20090038539
- Publication date Feb 12, 2009
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL
- Publication number 20090013924
- Publication date Jan 15, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL
- Publication number 20090000542
- Publication date Jan 1, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL GROWING METHOD
- Publication number 20090000538
- Publication date Jan 1, 2009
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-Nitride Semiconductor Crystal and Manufacturing Method Th...
- Publication number 20080283968
- Publication date Nov 20, 2008
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS
- Publication number 20080282971
- Publication date Nov 20, 2008
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III Nitride-based compound semiconductor
- Publication number 20080271665
- Publication date Nov 6, 2008
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing a semiconductor crystal
- Publication number 20080223286
- Publication date Sep 18, 2008
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growing apparatus
- Publication number 20080223288
- Publication date Sep 18, 2008
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting apparatus, phosphor and method of producing it
- Publication number 20080217579
- Publication date Sep 11, 2008
- SHARP KABUSHIKI KAISHA
- Masaya Ishida
- B82 - NANO-TECHNOLOGY
Information Patent Application
Apparatus for production of crystal of group III element nitride an...
- Publication number 20080213158
- Publication date Sep 4, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Minemoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-...
- Publication number 20080022921
- Publication date Jan 31, 2008
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEX...
- Publication number 20080011224
- Publication date Jan 17, 2008
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-Nitride Crystal Substrate and Manufacturing Method Thereo...
- Publication number 20070296061
- Publication date Dec 27, 2007
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH

Takatomo Sasaki

Person

Patents Grantslast 30 patents

Nitride single crystal manufacturing apparatus

Process for producing a nitride single crystal and apparatus therefor

Melt composition for gallium nitride single crystal growth and meth...

Group-III element nitride crystal producing method and group-III el...

Method for manufacturing nitride single crystal

Process for producing single crystal

Method for producing group III nitride-based compound semiconductor

Light-emitting apparatus, phosphorescent portion, and method of pro...

Apparatus for producing nitride single crystal

Method for producing group III nitride-based compound semiconductor...

Method for producing a semiconductor crystal

GaN crystal producing method, GaN crystal, GaN crystal substrate, s...

Method and apparatus for producing group III nitride based compound...

Semiconductor substrate, electronic device, optical device, and pro...

Method for analyzing sample in liquid

Group III-nitride crystal, manufacturing method thereof, group III-...

Method for manufacturing single crystal of nitride

Method for producing group-III-element nitride single crystals and...

Optical wavelength conversion element having a cesium-lithium-borat...

Group III-nitride semiconductor crystal and manufacturing method th...

Single crystal growing method

Process and apparatus for producing nitride single crystal

Method for producing hexagonal boron nitride single crystal and hex...

Method for producing III group element nitride crystal, production...

Apparatus for production of crystal of group III element nitride an...

Method for preparing borate-based crystal and laser oscillation app...

Crystal growing apparatus

Light-emitting apparatus, phosphor and method of producing it

Method for producing group III element nitride single crystal and g...

Method for producing semiconductor crystal

Patents Applicationslast 30 patents

GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III EL...

METHOD FOR ANALYZING SAMPLE IN LIQUID

GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III EL...

Semiconductor Substrate, Electronic Device, Optical Device, and Pro...

METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR...

PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-...

GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, S...

METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL

Melt composition for gallium nitride single crystal growth and meth...

METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARB...

Method and Apparatus for Producing Group III Nitride Based Compound...

Apparatus for Producing Group III Nitride Based Compound Semiconductor

Production Methods of Semiconductor Crystal and Semiconductor Subst...

Method for manufacturing single crystal of nitride

PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR

WAVELENGTH CONVERSION OPTICAL ELEMENT, METHOD FOR FABRICATING WAVEL...

PROCESS FOR PRODUCING SINGLE CRYSTAL

PROCESS AND APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL

APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL

SINGLE CRYSTAL GROWING METHOD

Group III-Nitride Semiconductor Crystal and Manufacturing Method Th...

NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS

Method for producing group III Nitride-based compound semiconductor

Method for producing a semiconductor crystal

Crystal growing apparatus

Light-emitting apparatus, phosphor and method of producing it

Apparatus for production of crystal of group III element nitride an...

Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-...

METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTAL AND HEX...

Group III-Nitride Crystal Substrate and Manufacturing Method Thereo...