Takatoshi Nagoya

Person

Annaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for evaluating oxide dielectric breakdown voltage of a silic...
- Patent number 8,551,246
- Issue date Oct 8, 2013
- Shin-Etsu Handotai Co., Ltd.
- Fumio Tahara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing annealed wafer and annealed wafer
- Patent number 7,659,216
- Issue date Feb 9, 2010
- Shin-Etsu Handotai Co., Ltd.
- Takatoshi Nagoya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating dopant contamination of semiconductor wafer
- Patent number 7,622,312
- Issue date Nov 24, 2009
- Shin-Etsu Handotai Co., Ltd.
- Takatoshi Nagoya
- G01 - MEASURING TESTING
Information Patent Grant
Method of producing annealed wafer and annealed wafer
- Patent number 7,189,293
- Issue date Mar 13, 2007
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing annealed wafer and annealed wafer
- Patent number 7,153,785
- Issue date Dec 26, 2006
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed wafer manufacturing method and annealed wafer
- Patent number 6,841,450
- Issue date Jan 11, 2005
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing single-crystal-silicon wafers
- Patent number 6,805,743
- Issue date Oct 19, 2004
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for annealed wafer
- Patent number 6,670,261
- Issue date Dec 30, 2003
- Shin-Etsu Handotai Co., Ltd.
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a single crystal thin film
- Patent number 5,685,905
- Issue date Nov 11, 1997
- Shin-Etsu Handotai, Co., Ltd.
- Takatoshi Nagoya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing silicon epitaxial layer
- Patent number 5,487,358
- Issue date Jan 30, 1996
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for growing silicon epitaxial layer
- Patent number 5,421,288
- Issue date Jun 6, 1995
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Ohta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Pattern shift measuring method
- Patent number 5,172,188
- Issue date Dec 15, 1992
- Shin-Etsu Handotai Co., Ltd.
- Takatoshi Nagoya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pattern shift measuring method
- Patent number 5,156,982
- Issue date Oct 20, 1992
- Shin-Etsu Handotai Co., Ltd.
- Takatoshi Nagoya
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTURING SILICON S...
- Publication number 20110045246
- Publication date Feb 24, 2011
- Shin-Etsu Handotai Co., Ltd.
- Fumio Tahara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing annealed wafer and annealed wafer
- Publication number 20090011613
- Publication date Jan 8, 2009
- Takatoshi Nagoya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Evaluating Dopant Contamination Of Semiconductor Wafer
- Publication number 20080108155
- Publication date May 8, 2008
- SHIN-ETSU HANDOTAI CO., LTD.
- Takatoshi Nagoya
- G01 - MEASURING TESTING
Information Patent Application
Production method for anneal wafer and anneal wafer
- Publication number 20040231759
- Publication date Nov 25, 2004
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method for anneal wafer and anneal wafer
- Publication number 20040192071
- Publication date Sep 30, 2004
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing single-crystal-silicon wafers
- Publication number 20030164139
- Publication date Sep 4, 2003
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing anneal wafer and anneal wafer
- Publication number 20020173173
- Publication date Nov 21, 2002
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production method for annealed wafer
- Publication number 20020160591
- Publication date Oct 31, 2002
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS

Takatoshi Nagoya

Person

Patents Grantslast 30 patents

Method for evaluating oxide dielectric breakdown voltage of a silic...

Method for producing annealed wafer and annealed wafer

Method for evaluating dopant contamination of semiconductor wafer

Method of producing annealed wafer and annealed wafer

Method of producing annealed wafer and annealed wafer

Annealed wafer manufacturing method and annealed wafer

Method for manufacturing single-crystal-silicon wafers

Production method for annealed wafer

Method of manufacturing a single crystal thin film

Apparatus for growing silicon epitaxial layer

Process for growing silicon epitaxial layer

Pattern shift measuring method

Pattern shift measuring method

Patents Applicationslast 30 patents

SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTURING SILICON S...

Method for producing annealed wafer and annealed wafer

Method For Evaluating Dopant Contamination Of Semiconductor Wafer

Production method for anneal wafer and anneal wafer

Production method for anneal wafer and anneal wafer

Method for manufacturing single-crystal-silicon wafers

Method of producing anneal wafer and anneal wafer

Production method for annealed wafer