Takatoshi Yamashita

Person

Kyoto-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Repeller structure and ion source
- Patent number 8,702,920
- Issue date Apr 22, 2014
- Nissin Ion Equipment Co., Ltd.
- Tadashi Ikejiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanting apparatus and deflecting electrode
- Patent number 8,389,964
- Issue date Mar 5, 2013
- Nissin Ion Equipment Co., Ltd.
- Tetsuya Igo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion source
- Patent number 8,253,114
- Issue date Aug 28, 2012
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation apparatus and method of correcting deviation angle...
- Patent number 8,008,630
- Issue date Aug 30, 2011
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion source, ion implantation apparatus, and ion implantation method
- Patent number 7,791,041
- Issue date Sep 7, 2010
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanting apparatus and method of correcting beam orbit
- Patent number 7,772,573
- Issue date Aug 10, 2010
- Nissin Ion Equipment Co., Ltd.
- Tetsuya Igo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion source and ion implantation apparatus
- Patent number 7,755,062
- Issue date Jul 13, 2010
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion source and method for operating same
- Patent number 7,718,978
- Issue date May 18, 2010
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanter
- Patent number 7,635,850
- Issue date Dec 22, 2009
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanter
- Patent number 7,605,382
- Issue date Oct 20, 2009
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- G01 - MEASURING TESTING
Information Patent Grant
Electric field lens and ion implanter having the same
- Patent number 7,598,498
- Issue date Oct 6, 2009
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanter, and angle measurement apparatus and beam divergence...
- Patent number 7,358,509
- Issue date Apr 15, 2008
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic accelerator and ion implanting apparatus with the same
- Patent number 7,098,614
- Issue date Aug 29, 2006
- Nissin Ion Equipment Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Particle implantation apparatus and particle implantation method
- Patent number 6,835,289
- Issue date Dec 28, 2004
- Nissin Electric Co., Ltd.
- Takatoshi Yamashita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ion source and operation method thereof
- Patent number 6,797,964
- Issue date Sep 28, 2004
- Nissin Electric Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion source
- Patent number 6,696,793
- Issue date Feb 24, 2004
- Nissin Electric Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for implanting an ion on a target and method for the same
- Patent number 6,639,233
- Issue date Oct 28, 2003
- Nissin Electric Co., Ltd.
- Takatoshi Yamashita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Operation method of ion source and ion beam irradiation apparatus
- Patent number 6,570,166
- Issue date May 27, 2003
- Nissin Electric Co., Ltd.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for generating indium ion beam
- Patent number 6,497,744
- Issue date Dec 24, 2002
- Nissin Electric Co., Ltd.
- Takatoshi Yamashita
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...

Patents Applicationslast 30 patents

Information Patent Application
ION IMPLANTING APPARATUS AND DEFLECTING ELECTRODE
- Publication number 20110297843
- Publication date Dec 8, 2011
- NISSIN ION EQUIPMENT CO., LTD.
- Tetsuya Igo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPELLER STRUCTURE AND ION SOURCE
- Publication number 20110139613
- Publication date Jun 16, 2011
- NISSIN ION EQUIPMENT CO., LTD.
- Tadashi Ikejiri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION SOURCE
- Publication number 20100051825
- Publication date Mar 4, 2010
- NISSIN ION EQUIPMENT CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTING APPARATUS AND METHOD OF CORRECTING BEAM ORBIT
- Publication number 20090302214
- Publication date Dec 10, 2009
- NISSIN ION EQUIPMENT CO., LTD.
- Tetsuya Igo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTING APPARATUS AND ION BEAM DEFLECTION ANGLE CORRECTING M...
- Publication number 20090289193
- Publication date Nov 26, 2009
- NISSIN ION EQUIPMENT CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION SOURCE AND ION IMPLANTATION APPARATUS
- Publication number 20090212232
- Publication date Aug 27, 2009
- NISSIN ION EQUIPMENT CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION SOURCE, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD
- Publication number 20090078890
- Publication date Mar 26, 2009
- NISSIN ION EQUIPMENT CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion Source and Method For Operating Same
- Publication number 20090001290
- Publication date Jan 1, 2009
- NISSIN ION EQUIPMENT CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTER
- Publication number 20080135753
- Publication date Jun 12, 2008
- Takatoshi YAMASHITA
- G01 - MEASURING TESTING
Information Patent Application
ION IMPLANTER
- Publication number 20080135777
- Publication date Jun 12, 2008
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electric field lens and ion implanter having the same
- Publication number 20080035856
- Publication date Feb 14, 2008
- NISSIN ION EQUIPMENT CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion implanter, and angle measurement apparatus and beam divergence...
- Publication number 20060192142
- Publication date Aug 31, 2006
- NISSIN ION EQUIPMENT CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic accelerator and ion implanting apparatus with the same
- Publication number 20030173914
- Publication date Sep 18, 2003
- NISSIN ELECTRIC CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Particle implantation apparatus and particle implantation method
- Publication number 20030164287
- Publication date Sep 4, 2003
- NISSIN ELECTRIC CO., LTD.
- Takatoshi Yamashita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Ion source
- Publication number 20030094902
- Publication date May 22, 2003
- NISSIN ELECTRIC CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for implanting an ion on a target and method for the same
- Publication number 20030030013
- Publication date Feb 13, 2003
- NISSIN ELECTRIC CO., LTD.
- Takatoshi Yamashita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Apparatus and method for generating indium ion beam
- Publication number 20020056342
- Publication date May 16, 2002
- NISSIN ELECTRIC CO., LTD.
- Takatoshi Yamashita
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Operation method of ion source and ion beam irradiation apparatus
- Publication number 20020029746
- Publication date Mar 14, 2002
- NISSIN ELECTRIC CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ion source and operation method thereof
- Publication number 20010017353
- Publication date Aug 30, 2001
- NISSIN ELECTRIC CO., LTD.
- Takatoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS

Takatoshi Yamashita

Person

Patents Grantslast 30 patents

Repeller structure and ion source

Ion implanting apparatus and deflecting electrode

Ion source

Ion implantation apparatus and method of correcting deviation angle...

Ion source, ion implantation apparatus, and ion implantation method

Ion implanting apparatus and method of correcting beam orbit

Ion source and ion implantation apparatus

Ion source and method for operating same

Ion implanter

Ion implanter

Electric field lens and ion implanter having the same

Ion implanter, and angle measurement apparatus and beam divergence...

Electrostatic accelerator and ion implanting apparatus with the same

Particle implantation apparatus and particle implantation method

Ion source and operation method thereof

Ion source

Apparatus for implanting an ion on a target and method for the same

Operation method of ion source and ion beam irradiation apparatus

Apparatus and method for generating indium ion beam

Patents Applicationslast 30 patents

ION IMPLANTING APPARATUS AND DEFLECTING ELECTRODE

REPELLER STRUCTURE AND ION SOURCE

ION SOURCE

ION IMPLANTING APPARATUS AND METHOD OF CORRECTING BEAM ORBIT

ION IMPLANTING APPARATUS AND ION BEAM DEFLECTION ANGLE CORRECTING M...

ION SOURCE AND ION IMPLANTATION APPARATUS

ION SOURCE, ION IMPLANTATION APPARATUS, AND ION IMPLANTATION METHOD

Ion Source and Method For Operating Same

ION IMPLANTER

ION IMPLANTER

Electric field lens and ion implanter having the same

Ion implanter, and angle measurement apparatus and beam divergence...

Electrostatic accelerator and ion implanting apparatus with the same

Particle implantation apparatus and particle implantation method

Ion source

Apparatus for implanting an ion on a target and method for the same

Apparatus and method for generating indium ion beam

Operation method of ion source and ion beam irradiation apparatus

Ion source and operation method thereof