Takaya MIYASE

Person

Osaka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a silicon carbide epitaxial substrate
- Patent number 12,176,399
- Issue date Dec 24, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
- Patent number 12,125,881
- Issue date Oct 22, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate and me...
- Patent number 12,020,927
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 12,020,924
- Issue date Jun 25, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate and me...
- Patent number 11,735,415
- Issue date Aug 22, 2023
- Sumitomo Electric Industries, Ltd.
- Takaya Miyase
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer
- Patent number 11,459,670
- Issue date Oct 4, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,526,699
- Issue date Jan 7, 2020
- Sumitomo Electric Industries, Ltd
- Kenji Kanbara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20250142914
- Publication date May 1, 2025
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240363696
- Publication date Oct 31, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20240304676
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20240301585
- Publication date Sep 12, 2024
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20240274434
- Publication date Aug 15, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20240026569
- Publication date Jan 25, 2024
- Sumitomo Electric Industries, Ltd.
- Hiroki NISHIHARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20230272550
- Publication date Aug 31, 2023
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20220367643
- Publication date Nov 17, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20220059658
- Publication date Feb 24, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND ME...
- Publication number 20210313175
- Publication date Oct 7, 2021
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20210225646
- Publication date Jul 22, 2021
- Sumitomo Electric Industries, Ltd.
- Takaya MIYASE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND ME...
- Publication number 20210166941
- Publication date Jun 3, 2021
- Takaya MIYASE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER
- Publication number 20200362470
- Publication date Nov 19, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20200219981
- Publication date Jul 9, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Epitaxial Substrate and Method for Manufacturing Si...
- Publication number 20190242014
- Publication date Aug 8, 2019
- Kenji KANBARA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Takaya MIYASE

Person

Patents Grantslast 30 patents

Method of manufacturing a silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Method for manufacturing silicon carbide epitaxial substrate and me...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Method for manufacturing silicon carbide epitaxial substrate and me...

Silicon carbide epitaxial wafer

Silicon carbide epitaxial substrate and method for manufacturing si...

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

METHOD OF MANUFACTURING A SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND ME...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND ME...

SILICON CARBIDE EPITAXIAL WAFER

SILICON CARBIDE EPITAXIAL SUBSTRATE

Silicon Carbide Epitaxial Substrate and Method for Manufacturing Si...