Takayoshi Maeda

Person

Takatsuki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Substrate of gallium nitride single crystal and process for produci...
- Patent number 7,399,687
- Issue date Jul 15, 2008
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing III-V group compound semiconductor
- Patent number 6,946,308
- Issue date Sep 20, 2005
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor
- Patent number 6,844,574
- Issue date Jan 18, 2005
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating III-V group compound semiconductor
- Patent number 6,756,246
- Issue date Jun 29, 2004
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V compound semiconductor and method of producing the same
- Patent number 6,503,610
- Issue date Jan 7, 2003
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxially grown compound-semiconductor crystal
- Patent number 5,332,451
- Issue date Jul 26, 1994
- Sumitomo Chemical Company, Limited
- Masahiko Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor-phase epitaxial growth method
- Patent number 5,064,778
- Issue date Nov 12, 1991
- Sumitomo Chemical Co., Ltd.
- Takayoshi Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for vapor-phase growth
- Patent number 4,976,216
- Issue date Dec 11, 1990
- Sumitomo Chemical Co., Ltd.
- Takayoshi Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for production of sialons
- Patent number 4,172,108
- Issue date Oct 23, 1979
- Sumitomo Chemical Co., Ltd.
- Takayoshi Maeda
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
Substrate of gallium nitride single crystal and process for produci...
- Publication number 20060172512
- Publication date Aug 3, 2006
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing III-V group compound semiconductor
- Publication number 20030211710
- Publication date Nov 13, 2003
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating III-V Group compound semiconductor
- Publication number 20030045017
- Publication date Mar 6, 2003
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V compound semiconductor and method of producing the same
- Publication number 20010031385
- Publication date Oct 18, 2001
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH

Takayoshi Maeda

Person

Patents Grantslast 30 patents

Substrate of gallium nitride single crystal and process for produci...

Method of manufacturing III-V group compound semiconductor

III-V compound semiconductor

Method for fabricating III-V group compound semiconductor

Group III-V compound semiconductor and method of producing the same

Epitaxially grown compound-semiconductor crystal

Vapor-phase epitaxial growth method

Apparatus for vapor-phase growth

Process for production of sialons

Patents Applicationslast 30 patents

Substrate of gallium nitride single crystal and process for produci...

Method of manufacturing III-V group compound semiconductor

Method for fabricating III-V Group compound semiconductor

Group III-V compound semiconductor and method of producing the same