Takayuki Hirao

Person

Nagoya-City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,611,017
- Issue date Mar 21, 2023
- NGK Insulators, Ltd.
- Takayuki Hirao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,555,257
- Issue date Jan 17, 2023
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,309,455
- Issue date Apr 19, 2022
- NGK Insulators, Ltd.
- Takayuki Hirao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,088,299
- Issue date Aug 10, 2021
- NGK Insulators, Ltd.
- Takayuki Hirao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 nitride layer, composite substrate, and functional element
- Patent number 11,035,055
- Issue date Jun 15, 2021
- NGK Insulators, Ltd.
- Yoshinori Isoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,011,678
- Issue date May 18, 2021
- NGK Insulators, Ltd.
- Takayuki Hirao
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Underlying substrate including a seed crystal layer of a group 13 n...
- Patent number 10,947,638
- Issue date Mar 16, 2021
- NGK INSULATORS, LTD.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Free-standing substrate comprising polycrystalline group 13 element...
- Patent number 10,804,432
- Issue date Oct 13, 2020
- NGK Insulators, Ltd.
- Katsuhiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Free-standing substrate comprising polycrystalline group 13 element...
- Patent number 10,734,548
- Issue date Aug 4, 2020
- NGK Insulators, Ltd.
- Katsuhiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for producing a group 13 element nitride crystal...
- Patent number 10,190,233
- Issue date Jan 29, 2019
- NGK Insulators, Ltd.
- Suguru Noguchi
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Method for producing nitride of group-13 element, and melt composition
- Patent number 10,156,022
- Issue date Dec 18, 2018
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal
- Patent number 10,041,186
- Issue date Aug 7, 2018
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 3B nitride crystal substrate
- Patent number 9,677,192
- Issue date Jun 13, 2017
- NGK Insulators, Ltd.
- Takanao Shimodaira
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 13 nitride crystal with stepped surface
- Patent number 9,290,861
- Issue date Mar 22, 2016
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for peeling group 13 element nitride film
- Patent number 9,045,844
- Issue date Jun 2, 2015
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Films of nitrides of group 13 elements and layered body including t...
- Patent number 9,041,004
- Issue date May 26, 2015
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing gallium nitride layer and seed crystal substra...
- Patent number 8,795,431
- Issue date Aug 5, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing group 13 nitride crystal and group 13 nitride cr...
- Patent number 8,729,672
- Issue date May 20, 2014
- NGK Insulators, Ltd.
- Takanao Shimodaira
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing group 13 nitride crystal and group 13 nitride cr...
- Patent number 8,440,017
- Issue date May 14, 2013
- NGK Insulators, Ltd.
- Takanao Shimodaira
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing III metal nitride single crystal
- Patent number 7,988,784
- Issue date Aug 2, 2011
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230246132
- Publication date Aug 3, 2023
- NGK Insulators, Ltd.
- Kentaro NONAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20230215969
- Publication date Jul 6, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE,...
- Publication number 20220275532
- Publication date Sep 1, 2022
- NGK Insulators, Ltd.
- Suguru NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20220199854
- Publication date Jun 23, 2022
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200232120
- Publication date Jul 23, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200203573
- Publication date Jun 25, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200190695
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200194626
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200194621
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 NITRIDE LAYER, COMPOSITE SUBSTRATE, AND FUNCTIONAL ELEMENT
- Publication number 20190242029
- Publication date Aug 8, 2019
- NGK Insulators, Ltd.
- Yoshinori ISODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FREE-STANDING SUBSTRATE COMPRISING POLYCRYSTALLINE GROUP 13 ELEMENT...
- Publication number 20180350918
- Publication date Dec 6, 2018
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FREE-STANDING SUBSTRATE COMPRISING POLYCRYSTALLINE GROUP 13 ELEMENT...
- Publication number 20180351041
- Publication date Dec 6, 2018
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDERLYING SUBSTRATE, METHOD OF MANUFACTURING UNDERLYING SUBSTRATE,...
- Publication number 20180202067
- Publication date Jul 19, 2018
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
Growing Method and Device for Group 13 Element Nitride Crystal
- Publication number 20170283983
- Publication date Oct 5, 2017
- NGK Insulators, Ltd.
- Suguru Noguchi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Nitride Crystal
- Publication number 20160355945
- Publication date Dec 8, 2016
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Nitride of Group-13 Element, and Melt Composition
- Publication number 20160168749
- Publication date Jun 16, 2016
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Application
Films of Nitrides of Group 13 Elements and Layered Body Including t...
- Publication number 20140197420
- Publication date Jul 17, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Light-Emitting Element and Laminate Containing Same
- Publication number 20140158978
- Publication date Jun 12, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Peeling Group 13 Element Nitride Film
- Publication number 20140147953
- Publication date May 29, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...
- Publication number 20140026809
- Publication date Jan 30, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Gallium Nitride Layer and Seed Crystal Substra...
- Publication number 20140014028
- Publication date Jan 16, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...
- Publication number 20130221490
- Publication date Aug 29, 2013
- NGK Insulators, Ltd.
- Takanao SHIMODAIRA
- C30 - CRYSTAL GROWTH
Information Patent Application
BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTUR...
- Publication number 20120175740
- Publication date Jul 12, 2012
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...
- Publication number 20120012984
- Publication date Jan 19, 2012
- NGK Insulators, Ltd.
- Takanao SHIMODAIRA
- C30 - CRYSTAL GROWTH
Information Patent Application
Group 3B nitride crystal
- Publication number 20110287222
- Publication date Nov 24, 2011
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Application
Group 3B nitride crystal substrate
- Publication number 20110274609
- Publication date Nov 10, 2011
- NGK Insulators, Ltd.
- Takanao Shimodaira
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing III metal nitride single crystal
- Publication number 20100307404
- Publication date Dec 9, 2010
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH

Takayuki Hirao

Person

Patents Grantslast 30 patents

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 nitride layer, composite substrate, and functional element

Group 13 element nitride layer, free-standing substrate and functio...

Underlying substrate including a seed crystal layer of a group 13 n...

Free-standing substrate comprising polycrystalline group 13 element...

Free-standing substrate comprising polycrystalline group 13 element...

Method and device for producing a group 13 element nitride crystal...

Method for producing nitride of group-13 element, and melt composition

Method for producing nitride crystal

Group 3B nitride crystal substrate

Group 13 nitride crystal with stepped surface

Method for peeling group 13 element nitride film

Films of nitrides of group 13 elements and layered body including t...

Method for producing gallium nitride layer and seed crystal substra...

Method for growing group 13 nitride crystal and group 13 nitride cr...

Method for growing group 13 nitride crystal and group 13 nitride cr...

Method for manufacturing III metal nitride single crystal

Patents Applicationslast 30 patents

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, SELF-SUPPORTING SUBSTRATE,...

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 NITRIDE LAYER, COMPOSITE SUBSTRATE, AND FUNCTIONAL ELEMENT

FREE-STANDING SUBSTRATE COMPRISING POLYCRYSTALLINE GROUP 13 ELEMENT...

FREE-STANDING SUBSTRATE COMPRISING POLYCRYSTALLINE GROUP 13 ELEMENT...

UNDERLYING SUBSTRATE, METHOD OF MANUFACTURING UNDERLYING SUBSTRATE,...

Growing Method and Device for Group 13 Element Nitride Crystal

Method for Producing Nitride Crystal

Method for Producing Nitride of Group-13 Element, and Melt Composition

Films of Nitrides of Group 13 Elements and Layered Body Including t...

Semiconductor Light-Emitting Element and Laminate Containing Same

Method for Peeling Group 13 Element Nitride Film

Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...

Method for Producing Gallium Nitride Layer and Seed Crystal Substra...

METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...

BASE SUBSTRATE, GROUP 3B NITRIDE CRYSTAL, AND METHOD FOR MANUFACTUR...

METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CR...

Group 3B nitride crystal

Group 3B nitride crystal substrate

Method for manufacturing III metal nitride single crystal